Realization OF InGaN solar cells on (111) silicon substrate

Balakrishnam Jampana; Tianming Xu; Andrew Melton; Muhammad Jamil; Robert Opila; Christiana Honsberg; Ian Ferguson

doi:10.1109/PVSC.2010.5616748

Realization OF InGaN solar cells on (111) silicon substrate

Balakrishnam Jampana, Tianming Xu, Andrew Melton, Muhammad Jamil, Robert Opila, Christiana Honsberg, Ian Ferguson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. Currently InGaN based solar cells have been demonstrated on sapphire substrate. This substrate expense adds up significantly to the cost of solar cells realization and further issues like sapphire substrate removal are of concern. Alternatively, InGaN epitaxial layers have been successfully grown on silicon substrate. An InGaN based quantum well solar cell structure is grown simultaneously by MOCVD on both GaN/sapphire and GaN/silicon substrates. The fabricated solar cells have comparable photo-response. The V_oc of InGaN solar cell on sapphire is higher while the FF of InGaN solar cell on silicon is higher.

Original language	English (US)
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	457-460
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5616748
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2010.5616748

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Realization OF InGaN solar cells on (111) silicon substrate. / Jampana, Balakrishnam; Xu, Tianming; Melton, Andrew et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 457-460 5616748 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jampana, B, Xu, T, Melton, A, Jamil, M, Opila, R, Honsberg, C & Ferguson, I 2010, Realization OF InGaN solar cells on (111) silicon substrate. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5616748, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 457-460, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5616748

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abstract = "The III-nitride material system offers substantial potential to develop high-efficiency solar cells. Currently InGaN based solar cells have been demonstrated on sapphire substrate. This substrate expense adds up significantly to the cost of solar cells realization and further issues like sapphire substrate removal are of concern. Alternatively, InGaN epitaxial layers have been successfully grown on silicon substrate. An InGaN based quantum well solar cell structure is grown simultaneously by MOCVD on both GaN/sapphire and GaN/silicon substrates. The fabricated solar cells have comparable photo-response. The Voc of InGaN solar cell on sapphire is higher while the FF of InGaN solar cell on silicon is higher.",

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AU - Jampana, Balakrishnam

AU - Xu, Tianming

AU - Melton, Andrew

AU - Jamil, Muhammad

AU - Opila, Robert

AU - Honsberg, Christiana

AU - Ferguson, Ian

PY - 2010

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AB - The III-nitride material system offers substantial potential to develop high-efficiency solar cells. Currently InGaN based solar cells have been demonstrated on sapphire substrate. This substrate expense adds up significantly to the cost of solar cells realization and further issues like sapphire substrate removal are of concern. Alternatively, InGaN epitaxial layers have been successfully grown on silicon substrate. An InGaN based quantum well solar cell structure is grown simultaneously by MOCVD on both GaN/sapphire and GaN/silicon substrates. The fabricated solar cells have comparable photo-response. The Voc of InGaN solar cell on sapphire is higher while the FF of InGaN solar cell on silicon is higher.

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Realization OF InGaN solar cells on (111) silicon substrate

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