Realization OF InGaN solar cells on (111) silicon substrate

Balakrishnam Jampana, Tianming Xu, Andrew Melton, Muhammad Jamil, Robert Opila, Christiana Honsberg, Ian Ferguson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


The III-nitride material system offers substantial potential to develop high-efficiency solar cells. Currently InGaN based solar cells have been demonstrated on sapphire substrate. This substrate expense adds up significantly to the cost of solar cells realization and further issues like sapphire substrate removal are of concern. Alternatively, InGaN epitaxial layers have been successfully grown on silicon substrate. An InGaN based quantum well solar cell structure is grown simultaneously by MOCVD on both GaN/sapphire and GaN/silicon substrates. The fabricated solar cells have comparable photo-response. The Voc of InGaN solar cell on sapphire is higher while the FF of InGaN solar cell on silicon is higher.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Number of pages4
StatePublished - Dec 20 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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