Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy

W. Yang, H. Ade, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The formation of nanoscale Ti silicide islands was observed by Photo-electron emission microscopy (PEEM). The islands were prepared by deposition of an ultrathin Ti (3-12 ML) on Si(001) at room temperature and at an elevated temperature of 950 °C. The island formation was initiated by in situ annealing to 1150 °C. It was observed that initially Ti silicide islands form while longer annealing indicates some islands move and coalesce with other islands. Most of the islands are similar in size and have relatively uniform separation. Also, it was shown that for continued Ti deposition at a temperature of 950 °C, the density of islands did not increase. However, islands grew together when their perimeter lines touch each other. The results are described in terms of island growth processes of coalescence and ripening.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages197-202
Number of pages6
Volume533
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

Other

OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/13/984/17/98

Fingerprint

Photoelectrons
Epitaxial growth
Microscopic examination
Annealing
Electron emission
Coalescence
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yang, W., Ade, H., & Nemanich, R. (1998). Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy. In Materials Research Society Symposium - Proceedings (Vol. 533, pp. 197-202). MRS.

Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy. / Yang, W.; Ade, H.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. Vol. 533 MRS, 1998. p. 197-202.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, W, Ade, H & Nemanich, R 1998, Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy. in Materials Research Society Symposium - Proceedings. vol. 533, MRS, pp. 197-202, Proceedings of the 1998 MRS Spring Symposium, San Francisco, CA, USA, 4/13/98.
Yang W, Ade H, Nemanich R. Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy. In Materials Research Society Symposium - Proceedings. Vol. 533. MRS. 1998. p. 197-202
Yang, W. ; Ade, H. ; Nemanich, Robert. / Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy. Materials Research Society Symposium - Proceedings. Vol. 533 MRS, 1998. pp. 197-202
@inproceedings{a1e8d78ac7ee4f9fa211497214dbb23b,
title = "Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy",
abstract = "The formation of nanoscale Ti silicide islands was observed by Photo-electron emission microscopy (PEEM). The islands were prepared by deposition of an ultrathin Ti (3-12 ML) on Si(001) at room temperature and at an elevated temperature of 950 °C. The island formation was initiated by in situ annealing to 1150 °C. It was observed that initially Ti silicide islands form while longer annealing indicates some islands move and coalesce with other islands. Most of the islands are similar in size and have relatively uniform separation. Also, it was shown that for continued Ti deposition at a temperature of 950 °C, the density of islands did not increase. However, islands grew together when their perimeter lines touch each other. The results are described in terms of island growth processes of coalescence and ripening.",
author = "W. Yang and H. Ade and Robert Nemanich",
year = "1998",
language = "English (US)",
volume = "533",
pages = "197--202",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy

AU - Yang, W.

AU - Ade, H.

AU - Nemanich, Robert

PY - 1998

Y1 - 1998

N2 - The formation of nanoscale Ti silicide islands was observed by Photo-electron emission microscopy (PEEM). The islands were prepared by deposition of an ultrathin Ti (3-12 ML) on Si(001) at room temperature and at an elevated temperature of 950 °C. The island formation was initiated by in situ annealing to 1150 °C. It was observed that initially Ti silicide islands form while longer annealing indicates some islands move and coalesce with other islands. Most of the islands are similar in size and have relatively uniform separation. Also, it was shown that for continued Ti deposition at a temperature of 950 °C, the density of islands did not increase. However, islands grew together when their perimeter lines touch each other. The results are described in terms of island growth processes of coalescence and ripening.

AB - The formation of nanoscale Ti silicide islands was observed by Photo-electron emission microscopy (PEEM). The islands were prepared by deposition of an ultrathin Ti (3-12 ML) on Si(001) at room temperature and at an elevated temperature of 950 °C. The island formation was initiated by in situ annealing to 1150 °C. It was observed that initially Ti silicide islands form while longer annealing indicates some islands move and coalesce with other islands. Most of the islands are similar in size and have relatively uniform separation. Also, it was shown that for continued Ti deposition at a temperature of 950 °C, the density of islands did not increase. However, islands grew together when their perimeter lines touch each other. The results are described in terms of island growth processes of coalescence and ripening.

UR - http://www.scopus.com/inward/record.url?scp=0032303196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032303196&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032303196

VL - 533

SP - 197

EP - 202

BT - Materials Research Society Symposium - Proceedings

PB - MRS

ER -