Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy

W. Yang, H. Ade, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The formation of nanoscale Ti silicide islands was observed by Photo-electron emission microscopy (PEEM). The islands were prepared by deposition of an ultrathin Ti (3-12 ML) on Si(001) at room temperature and at an elevated temperature of 950 °C. The island formation was initiated by in situ annealing to 1150 °C. It was observed that initially Ti silicide islands form while longer annealing indicates some islands move and coalesce with other islands. Most of the islands are similar in size and have relatively uniform separation. Also, it was shown that for continued Ti deposition at a temperature of 950 °C, the density of islands did not increase. However, islands grew together when their perimeter lines touch each other. The results are described in terms of island growth processes of coalescence and ripening.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages197-202
Number of pages6
Volume533
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

Other

OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/13/984/17/98

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Yang, W., Ade, H., & Nemanich, R. (1998). Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy. In Materials Research Society Symposium - Proceedings (Vol. 533, pp. 197-202). MRS.