Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy

Zhongze Wang, Siu L. Kwan, T. P. Pearsall, J. L. Booth, B. T. Beard, Shane Johnson

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We demonstrate real-time semiconductor processing temperature control based on direct, noninvasive, in situ measurement of wafer temperature by diffuse reflectance spectroscopy. The precision of the controlled temperature was maintained within ±0.5°C with an update time of 2 s over a temperature range from 25 to 600°C for semi-insulating GaAs wafers. Direct control of the wafer temperature using diffuse reflectance spectroscopy is compared to the usual situation where the wafer heater temperature is controlled. The direct control of wafer temperature using diffuse reflectance spectroscopy is shown to be a significant improvement over conventional heater control technology in accuracy, stability, repeatability and response rate, for dynamic control of wafer temperature in the range of 25-600°C. Our technology can also be applied to Si and other semiconductor wafers following appropriate calibration.

Original languageEnglish (US)
Pages (from-to)116-121
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number1
StatePublished - Jan 1 1997
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this