Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

B. Johs, C. Herzinger, J. H. Dinan, A. Cornfeld, J. D. Benson, D. Doctor, G. Olson, I. Ferguson, M. Pelczynski, P. Chow, C. H. Kuo, Shane Johnson

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

To manufacture the next generation of epitaxially grown semiconductor device structures, real-time monitoring and control of the growth is considered a necessity to achieve acceptable yields. In situ spectroscopic ellipsometry (SE) has demonstrated sensitivity to important growth parameters, such as substrate temperature, layer thickness and composition; the literature also contains some examples of growth control by in situ SE. However, applying this characterization technique in a production environment presents a number of challenges. This article discusses these challenges and solutions which have been implemented on production-ready growth chambers. Real-time in situ SE composition monitoring results which were obtained on such chambers are in excellent agreement with ex situ characterization techniques. Preliminary composition control experiments, using in situ SE as the feedback sensor, are also presented.

Original languageEnglish (US)
Pages (from-to)490-495
Number of pages6
JournalThin Solid Films
Volume313-314
DOIs
StatePublished - Feb 13 1998

Keywords

  • Ellipsometry
  • Epitaxial growth
  • HgCdTe
  • In situ characterization
  • InGaAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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