Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

B. Johs, C. Herzinger, J. H. Dinan, A. Cornfeld, J. D. Benson, D. Doctor, G. Olson, I. Ferguson, M. Pelczynski, P. Chow, C. H. Kuo, Shane Johnson

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

To manufacture the next generation of epitaxially grown semiconductor device structures, real-time monitoring and control of the growth is considered a necessity to achieve acceptable yields. In situ spectroscopic ellipsometry (SE) has demonstrated sensitivity to important growth parameters, such as substrate temperature, layer thickness and composition; the literature also contains some examples of growth control by in situ SE. However, applying this characterization technique in a production environment presents a number of challenges. This article discusses these challenges and solutions which have been implemented on production-ready growth chambers. Real-time in situ SE composition monitoring results which were obtained on such chambers are in excellent agreement with ex situ characterization techniques. Preliminary composition control experiments, using in situ SE as the feedback sensor, are also presented.

Original languageEnglish (US)
Pages (from-to)490-495
Number of pages6
JournalThin Solid Films
Volume313-314
DOIs
StatePublished - Feb 13 1998

Fingerprint

Semiconductor growth
Spectroscopic ellipsometry
Epitaxial growth
ellipsometry
Monitoring
Semiconductor device structures
Chemical analysis
phytotrons
semiconductor devices
chambers
Feedback
sensitivity
sensors
Sensors
Substrates
Experiments

Keywords

  • Ellipsometry
  • Epitaxial growth
  • HgCdTe
  • In situ characterization
  • InGaAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry. / Johs, B.; Herzinger, C.; Dinan, J. H.; Cornfeld, A.; Benson, J. D.; Doctor, D.; Olson, G.; Ferguson, I.; Pelczynski, M.; Chow, P.; Kuo, C. H.; Johnson, Shane.

In: Thin Solid Films, Vol. 313-314, 13.02.1998, p. 490-495.

Research output: Contribution to journalArticle

Johs, B, Herzinger, C, Dinan, JH, Cornfeld, A, Benson, JD, Doctor, D, Olson, G, Ferguson, I, Pelczynski, M, Chow, P, Kuo, CH & Johnson, S 1998, 'Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry', Thin Solid Films, vol. 313-314, pp. 490-495. https://doi.org/10.1016/S0040-6090(97)00870-5
Johs, B. ; Herzinger, C. ; Dinan, J. H. ; Cornfeld, A. ; Benson, J. D. ; Doctor, D. ; Olson, G. ; Ferguson, I. ; Pelczynski, M. ; Chow, P. ; Kuo, C. H. ; Johnson, Shane. / Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry. In: Thin Solid Films. 1998 ; Vol. 313-314. pp. 490-495.
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AU - Doctor, D.

AU - Olson, G.

AU - Ferguson, I.

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