Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

C. H. Kuo, M. Boonzaayer, M. DeHerrera, T. Kyong, Yong-Hang Zhang, B. Johs, J. S. Hale

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.

Original languageEnglish (US)
Pages (from-to)1484-1488
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
StatePublished - May 1 1998

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this