Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

C. H. Kuo, M. Boonzaayer, M. DeHerrera, T. Kyong, Yong-Hang Zhang, B. Johs, J. S. Hale

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.

Original languageEnglish (US)
Pages (from-to)1484-1488
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
StatePublished - May 1998

Fingerprint

ellipsometers
Wavelength
Chemical analysis
wavelengths
Ellipsometry
ellipsometry
Optical constants
Epitaxial layers
Growth temperature
Substrates
feedback control
Epitaxial growth
Feedback control
temperature
Spectroscopy
reflectance
X rays
Temperature
high resolution
spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer. / Kuo, C. H.; Boonzaayer, M.; DeHerrera, M.; Kyong, T.; Zhang, Yong-Hang; Johs, B.; Hale, J. S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3, 05.1998, p. 1484-1488.

Research output: Contribution to journalArticle

@article{c68f738b897247c097218e066ee1b8fb,
title = "Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer",
abstract = "We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.",
author = "Kuo, {C. H.} and M. Boonzaayer and M. DeHerrera and T. Kyong and Yong-Hang Zhang and B. Johs and Hale, {J. S.}",
year = "1998",
month = "5",
language = "English (US)",
volume = "16",
pages = "1484--1488",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer

AU - Kuo, C. H.

AU - Boonzaayer, M.

AU - DeHerrera, M.

AU - Kyong, T.

AU - Zhang, Yong-Hang

AU - Johs, B.

AU - Hale, J. S.

PY - 1998/5

Y1 - 1998/5

N2 - We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.

AB - We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.

UR - http://www.scopus.com/inward/record.url?scp=0342831951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342831951&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0342831951

VL - 16

SP - 1484

EP - 1488

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -