We have compiled the optical constants database for Inx Ga1-xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525°C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy during the growth of the epitaxial layer. Ellipsometry was used to monitor the InxGa1-xAs composition over the entire temper*«« and composition range of the database. The composition monitored by ellipsometry is within 0.002 from the high resolution x-ray data with the exception of growth temperature a 400°C which is 0.005. We have also demonstrated the real time in situ feedback control of the InxGa1-x As composition during epitaxial growth by using ellipsometry. The absolute accuracy of the InxGa1-xAs composition from the controlled experiment is 0.002. We can use this database to grow thick InxGa1-xAs layers grown on the InP substrates and can also use this as an in situ tool to fine tune the InxGa1-xAs composition before the growth of the complicated structure.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 1 1998|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering