Abstract
Recently a prototype of complementary resistive switches has been proposed to solve the sneak-path problem in passive crossbar memory arrays. To further evaluate the potential of this novel cell structure for practical applications, we present a modeling analysis to capture its switching dynamics and analyze its unique read/write schemes. The model is corroborated by experimental data. We found a trade-off between the read voltage window and write voltage window. The constraint from avoiding disturbance on unselected cells is critical for proper functionality, which in turn limits the writing speed.
| Original language | English (US) |
|---|---|
| Article number | 465202 |
| Journal | Nanotechnology |
| Volume | 21 |
| Issue number | 46 |
| DOIs | |
| State | Published - Nov 19 2010 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering