Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

Shimeng Yu, Jiale Liang, Yi Wu, H. S. Philip Wong

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

Recently a prototype of complementary resistive switches has been proposed to solve the sneak-path problem in passive crossbar memory arrays. To further evaluate the potential of this novel cell structure for practical applications, we present a modeling analysis to capture its switching dynamics and analyze its unique read/write schemes. The model is corroborated by experimental data. We found a trade-off between the read voltage window and write voltage window. The constraint from avoiding disturbance on unselected cells is critical for proper functionality, which in turn limits the writing speed.

Original languageEnglish (US)
Article number465202
JournalNanotechnology
Volume21
Issue number46
DOIs
StatePublished - Nov 19 2010

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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