Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates

M. A L Johnson, Z. Yu, C. Boney, W. C. Hughes, J. W. Cook, J. F. Schetzina, H. Zhao, Brian Skromme, J. A. Edmond

Research output: Chapter in Book/Report/Conference proceedingConference contribution

37 Scopus citations

Abstract

Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages215-220
Number of pages6
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Johnson, M. A. L., Yu, Z., Boney, C., Hughes, W. C., Cook, J. W., Schetzina, J. F., Zhao, H., Skromme, B., & Edmond, J. A. (1997). Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 215-220). Materials Research Society.