Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates

M. A L Johnson, Z. Yu, C. Boney, W. C. Hughes, J. W. Cook, J. F. Schetzina, H. Zhao, Brian Skromme, J. A. Edmond

Research output: Chapter in Book/Report/Conference proceedingConference contribution

37 Citations (Scopus)

Abstract

Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages215-220
Number of pages6
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

Fingerprint

Binding energy
Molecular beam epitaxy
Nitrogen
Plasma sources
Film growth
Substrates
Ground state
Photoluminescence
Thin films
Atoms
Molecules
Experiments
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Johnson, M. A. L., Yu, Z., Boney, C., Hughes, W. C., Cook, J. W., Schetzina, J. F., ... Edmond, J. A. (1997). Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 215-220). Materials Research Society.

Reactive MBE growth of GaN and GaN : H on GaN/SiC substrates. / Johnson, M. A L; Yu, Z.; Boney, C.; Hughes, W. C.; Cook, J. W.; Schetzina, J. F.; Zhao, H.; Skromme, Brian; Edmond, J. A.

Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 215-220.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Johnson, MAL, Yu, Z, Boney, C, Hughes, WC, Cook, JW, Schetzina, JF, Zhao, H, Skromme, B & Edmond, JA 1997, Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates. in FA Ponce, TD Moustakas, I Akasaki & BA Monemar (eds), Materials Research Society Symposium - Proceedings. vol. 449, Materials Research Society, pp. 215-220, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 12/2/96.
Johnson MAL, Yu Z, Boney C, Hughes WC, Cook JW, Schetzina JF et al. Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates. In Ponce FA, Moustakas TD, Akasaki I, Monemar BA, editors, Materials Research Society Symposium - Proceedings. Vol. 449. Materials Research Society. 1997. p. 215-220
Johnson, M. A L ; Yu, Z. ; Boney, C. ; Hughes, W. C. ; Cook, J. W. ; Schetzina, J. F. ; Zhao, H. ; Skromme, Brian ; Edmond, J. A. / Reactive MBE growth of GaN and GaN : H on GaN/SiC substrates. Materials Research Society Symposium - Proceedings. editor / F.A. Ponce ; T.D. Moustakas ; I. Akasaki ; B.A. Monemar. Vol. 449 Materials Research Society, 1997. pp. 215-220
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abstract = "Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.",
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AB - Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

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