Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates

M. A L Johnson; Z. Yu; C. Boney; W. C. Hughes; J. W. Cook; J. F. Schetzina; H. Zhao; Brian Skromme; J. A. Edmond

Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates

M. A L Johnson, Z. Yu, C. Boney, W. C. Hughes, J. W. Cook, J. F. Schetzina, H. Zhao, Brian Skromme, J. A. Edmond

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
Publisher	Materials Research Society
Pages	215-220
Number of pages	6
Volume	449
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Other

Other	Proceedings of the 1996 MRS Fall Symposium
City	Boston, MA, USA
Period	12/2/96 → 12/6/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Johnson, MAL, Yu, Z, Boney, C, Hughes, WC, Cook, JW, Schetzina, JF, Zhao, H, Skromme, B & Edmond, JA 1997, Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates. in FA Ponce, TD Moustakas, I Akasaki & BA Monemar (eds), Materials Research Society Symposium - Proceedings. vol. 449, Materials Research Society, pp. 215-220, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 12/2/96.

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title = "Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates",

abstract = "Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.",

author = "Johnson, {M. A L} and Z. Yu and C. Boney and Hughes, {W. C.} and Cook, {J. W.} and Schetzina, {J. F.} and H. Zhao and Brian Skromme and Edmond, {J. A.}",

year = "1997",

language = "English (US)",

volume = "449",

pages = "215--220",

editor = "F.A. Ponce and T.D. Moustakas and I. Akasaki and B.A. Monemar",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 06-12-1996",

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TY - GEN

T1 - Reactive MBE growth of GaN and GaN

T2 - Proceedings of the 1996 MRS Fall Symposium

AU - Johnson, M. A L

AU - Yu, Z.

AU - Boney, C.

AU - Hughes, W. C.

AU - Cook, J. W.

AU - Schetzina, J. F.

AU - Zhao, H.

AU - Skromme, Brian

AU - Edmond, J. A.

PY - 1997

Y1 - 1997

N2 - Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

AB - Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and 1st-positive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

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M3 - Conference contribution

AN - SCOPUS:0030644981

VL - 449

SP - 215

EP - 220

BT - Materials Research Society Symposium - Proceedings

A2 - Ponce, F.A.

A2 - Moustakas, T.D.

A2 - Akasaki, I.

A2 - Monemar, B.A.

PB - Materials Research Society

Y2 - 2 December 1996 through 6 December 1996

ER -

Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates

Abstract

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ASJC Scopus subject areas

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