TY - GEN
T1 - Reactive ion etching surface texturing of c-Si using silica nanosphere lithography technique for solar cell application
AU - Choi, Jea Young
AU - Honsberg, Christiana
PY - 2013
Y1 - 2013
N2 - A reactive ion etching (RIE) process has been applied to etch diverse shape of nanoscale surface texturing on crystalline silicon (c-Si) for solar cell application. In this work, silica nanospheres (NS) were used as a mask material to utilize selective etching between silicon surface and silica NS for texturing. For effective silica NS deposition, we also developed our own solvent-control spin-coating method showing great monolayer coverage under common laboratory environment which is possibly more suitable for low-cost fabrication compared to conventional approach (moisture and temperature controlled spin-coating or dipping coating method by Langmuir-Blodgett trough). In RIE process, the surface texturing was etched with various shapes to reduce the reflectivity from surface, and the spectral response measurement confirms the effectiveness of RIE texturing which showed phenomenal anti-reflection effect with less than 2% of light reflection below 1.0 um wavelength. In addition, experiments for Quinhydrone/Methanol (QHY/ME) surface passivation for RIE textured surface were proceeded to evaluate RIE texturing effect for surface recombination velocity and minority carrier lifetime.
AB - A reactive ion etching (RIE) process has been applied to etch diverse shape of nanoscale surface texturing on crystalline silicon (c-Si) for solar cell application. In this work, silica nanospheres (NS) were used as a mask material to utilize selective etching between silicon surface and silica NS for texturing. For effective silica NS deposition, we also developed our own solvent-control spin-coating method showing great monolayer coverage under common laboratory environment which is possibly more suitable for low-cost fabrication compared to conventional approach (moisture and temperature controlled spin-coating or dipping coating method by Langmuir-Blodgett trough). In RIE process, the surface texturing was etched with various shapes to reduce the reflectivity from surface, and the spectral response measurement confirms the effectiveness of RIE texturing which showed phenomenal anti-reflection effect with less than 2% of light reflection below 1.0 um wavelength. In addition, experiments for Quinhydrone/Methanol (QHY/ME) surface passivation for RIE textured surface were proceeded to evaluate RIE texturing effect for surface recombination velocity and minority carrier lifetime.
KW - Mono-crystalline silicon
KW - Reactive ion etching
KW - Silica nanospheres
KW - Surface passivation
KW - Surface texturing
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U2 - 10.1109/PVSC.2013.6744355
DO - 10.1109/PVSC.2013.6744355
M3 - Conference contribution
AN - SCOPUS:84896465156
SN - 9781479932993
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1199
EP - 1202
BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Y2 - 16 June 2013 through 21 June 2013
ER -