Reactions of thin-film titanium on silicon studied by Raman spectroscopy

R. J. Nemanich, R. T. Fulks, B. L. Stafford, H. A. Vander Plas

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Abstract

Thin Ti films have been deposited on Si 〈100〉 substrates and annealed to form silicide compounds. The annealings were performed in a vacuum rapid isothermal annealing system or in an UHV chamber. Raman spectra were obtained after various processing stages or in situ in the UHV system. The results indicate the simultaneous formation of crystalline Ti2O 3 and a Ti silicide tentatively identified as TiSi. Higher temperature annealing to greater than 750°C leads to the formation of TiSi2 and the disappearance of the Ti2O3 signal.

Original languageEnglish (US)
Pages (from-to)670-672
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number7
DOIs
StatePublished - Dec 1 1985
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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