Rapid thermal nitridation of thin SiO2 films

D. Henscheid, Michael Kozicki, G. W. Sheets, M. Mughal, I. Zwiebel, R. J. Graham

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An alternative to SiO2 for gate dielectric applications in MIS devices is nitrided silicon dioxide. A study of this material is presented in this paper. Thin SiO2 layers (10 nm minimum thickness) were grown on silicon substrates and subsequently nitrided in ammonia at 1 atm using a rapid thermal processing system. Nitridation times ranged from 3 sec to 60 sec at temperatures from 900 to 1200‡ C. The resulting films were then characterized using a variety of techniques including high resolution TEM, XPS, AES, SIMS, and electrical measurements (C-V). Higher temperatures and longer processing times resulted in the accumulation of nitrogen at the film surface and at the Si/SiO2 interface. As expected, the electrical characteristics of the nitrided films were strongly influenced by the processing conditions. The morphology of the interface, as revealed by high-resolution TEM, was also altered by the nitridation process, especially for high processing temperatures (>1000° C).

Original languageEnglish (US)
Pages (from-to)99-104
Number of pages6
JournalJournal of Electronic Materials
Volume18
Issue number2
DOIs
StatePublished - Mar 1989

Fingerprint

Nitridation
Thin films
MIS devices
thin films
Processing
Transmission electron microscopy
Rapid thermal processing
Gate dielectrics
Silicon
Secondary ion mass spectrometry
Ammonia
Silicon Dioxide
Temperature
transmission electron microscopy
high resolution
MIS (semiconductors)
Nitrogen
X ray photoelectron spectroscopy
Silica
electrical measurement

Keywords

  • dielectric applications
  • Nitridation
  • SiO

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Henscheid, D., Kozicki, M., Sheets, G. W., Mughal, M., Zwiebel, I., & Graham, R. J. (1989). Rapid thermal nitridation of thin SiO2 films. Journal of Electronic Materials, 18(2), 99-104. https://doi.org/10.1007/BF02657393

Rapid thermal nitridation of thin SiO2 films. / Henscheid, D.; Kozicki, Michael; Sheets, G. W.; Mughal, M.; Zwiebel, I.; Graham, R. J.

In: Journal of Electronic Materials, Vol. 18, No. 2, 03.1989, p. 99-104.

Research output: Contribution to journalArticle

Henscheid, D, Kozicki, M, Sheets, GW, Mughal, M, Zwiebel, I & Graham, RJ 1989, 'Rapid thermal nitridation of thin SiO2 films', Journal of Electronic Materials, vol. 18, no. 2, pp. 99-104. https://doi.org/10.1007/BF02657393
Henscheid D, Kozicki M, Sheets GW, Mughal M, Zwiebel I, Graham RJ. Rapid thermal nitridation of thin SiO2 films. Journal of Electronic Materials. 1989 Mar;18(2):99-104. https://doi.org/10.1007/BF02657393
Henscheid, D. ; Kozicki, Michael ; Sheets, G. W. ; Mughal, M. ; Zwiebel, I. ; Graham, R. J. / Rapid thermal nitridation of thin SiO2 films. In: Journal of Electronic Materials. 1989 ; Vol. 18, No. 2. pp. 99-104.
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