Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Perry C. Grant, Dongsheng Fan, Aboozar Mosleh, Shui Qing Yu, Vitaliy G. Dorogan, Michael E. Hawkridge, Yuriy I. Mazur, Mourad Benamara, Gregory J. Salamo, Shane Johnson

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples are measured at 80K and room temperature before and after rapid thermal annealing, to ascertain any improvement in the optical quality of the material. The impact of annealing temperature on QW interface quality, layer composition, and thicknesses are studied with x-ray diffraction. For a 60second annealing time, the low temperature peak PL intensity increases to a maximum of 1.8 times the original intensity at an annealing temperature of 500°C. Validating this optimum annealing temperature, the room temperature PL peak intensity is seen to increase by 2.2 times. The peak position exhibits a minor blueshift of 15meV throughout the 450-700°C temperature range, while annealing at 750°C produces a blue-shift on the order of 100meV, indicating out-diffusion of bismuth from the QW. Degradation of the QW interfaces with annealing temperatures above 550°C is observed. The composition and thickness of the QWs remained constant up to 700°C. Significant out-diffusion of bismuth and QW thinning are observed at an annealing temperature of 750°C.

Original languageEnglish (US)
Article number02C119
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number2
DOIs
StatePublished - Jan 1 2014

Fingerprint

Rapid thermal annealing
Molecular beam epitaxy
Semiconductor quantum wells
molecular beam epitaxy
quantum wells
annealing
Annealing
Temperature
Photoluminescence
Bismuth
temperature
photoluminescence
bismuth
gallium arsenide
room temperature
Chemical analysis
blue shift
Structural properties
x ray diffraction
Optical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy. / Grant, Perry C.; Fan, Dongsheng; Mosleh, Aboozar; Yu, Shui Qing; Dorogan, Vitaliy G.; Hawkridge, Michael E.; Mazur, Yuriy I.; Benamara, Mourad; Salamo, Gregory J.; Johnson, Shane.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 2, 02C119, 01.01.2014.

Research output: Contribution to journalArticle

Grant, Perry C. ; Fan, Dongsheng ; Mosleh, Aboozar ; Yu, Shui Qing ; Dorogan, Vitaliy G. ; Hawkridge, Michael E. ; Mazur, Yuriy I. ; Benamara, Mourad ; Salamo, Gregory J. ; Johnson, Shane. / Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2014 ; Vol. 32, No. 2.
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