RandD of diamond films in the Frontier Carbon Technology Project and related topics

Koji Kobashi, Yoshiki Nishibayashi, Yoshihiro Yokota, Yutaka Ando, Takeshi Tachibana, Nobuyuki Kawakami, Kazushi Hayashi, Kenichi Inoue, Kiichi Meguro, Hiroshi Imai, Hiroshi Furuta, Takashi Hirao, Kenjiro Oura, Yasuhito Gotoh, Hironori Nakahara, Hiroshi Tsuji, Junzo Ishikawa, Franz A. Koeck, Robert J. Nemanich, Tadashi SakaiNaoshi Sakuma, Hiroaki Yoshida

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

R&D activities on diamond chemical vapor deposition (CVD) and field emission in the Frontier Carbon Technology Project are presented. The topics are (1) morphology control of diamond films grown by a 60-kW, 915-MHz microwave plasma CVD reactor, (2) growth technology of large single crystal diamond with a low density of defects, (3) heteroepitaxial growth technology of diamond films on Pt, (4) fabrication of sharp emitter tips on single crystal diamond, (5) field emission study from diamond particles, and (6) intense field emission from ion implanted homoepitaxial diamond layer. Research results of field emission obtained by Kyoto University and North Carolina State University are also described.

Original languageEnglish (US)
Pages (from-to)233-240
Number of pages8
JournalDiamond and Related Materials
Volume12
Issue number3-7
DOIs
StatePublished - Jan 1 2003

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Keywords

  • Chemical vapor deposition
  • Diamond films
  • Etching
  • Field emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Kobashi, K., Nishibayashi, Y., Yokota, Y., Ando, Y., Tachibana, T., Kawakami, N., Hayashi, K., Inoue, K., Meguro, K., Imai, H., Furuta, H., Hirao, T., Oura, K., Gotoh, Y., Nakahara, H., Tsuji, H., Ishikawa, J., Koeck, F. A., Nemanich, R. J., ... Yoshida, H. (2003). RandD of diamond films in the Frontier Carbon Technology Project and related topics. Diamond and Related Materials, 12(3-7), 233-240. https://doi.org/10.1016/S0925-9635(02)00298-4