Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al
            xGa
            1-xN

Kong-Thon Tsen; D. K. Ferry; Stephen Goodnick; A. Salvador; H. Morkoc

Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al _xGa _1-xN

Kong-Thon Tsen, D. K. Ferry, Stephen Goodnick, A. Salvador, H. Morkoc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al _xGa _1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al _xGa _1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	270-278
Number of pages	9
Volume	3940
State	Published - 2000
Event	Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000

Other

Other	Ultrafast Phenomena in Semiconductors IV
City	San Jose, CA, USA
Period	1/27/00 → 1/28/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al _xGa _1-xN . / Tsen, Kong-Thon; Ferry, D. K.; Goodnick, Stephen et al.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3940 Society of Photo-Optical Instrumentation Engineers, 2000. p. 270-278.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsen, K-T, Ferry, DK, Goodnick, S, Salvador, A & Morkoc, H 2000, Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al _xGa _1-xN in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3940, Society of Photo-Optical Instrumentation Engineers, pp. 270-278, Ultrafast Phenomena in Semiconductors IV, San Jose, CA, USA, 1/27/00.

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title = "Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al xGa 1-xN ",

abstract = "Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves. ",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al xGa 1-xN

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Salvador, A.

AU - Morkoc, H.

PY - 2000

Y1 - 2000

N2 - Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.

AB - Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.

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BT - Proceedings of SPIE - The International Society for Optical Engineering

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T2 - Ultrafast Phenomena in Semiconductors IV

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ER -

Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al _xGa _1-xN

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