Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al xGa 1-xN

Kong-Thon Tsen, D. K. Ferry, Stephen Goodnick, A. Salvador, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages270-278
Number of pages9
Volume3940
StatePublished - 2000
EventUltrafast Phenomena in Semiconductors IV - San Jose, CA, USA
Duration: Jan 27 2000Jan 28 2000

Other

OtherUltrafast Phenomena in Semiconductors IV
CitySan Jose, CA, USA
Period1/27/001/28/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Tsen, K-T., Ferry, D. K., Goodnick, S., Salvador, A., & Morkoc, H. (2000). Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al xGa 1-xN In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3940, pp. 270-278). Society of Photo-Optical Instrumentation Engineers.