Abstract
Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 270-278 |
Number of pages | 9 |
Volume | 3940 |
State | Published - 2000 |
Event | Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000 |
Other
Other | Ultrafast Phenomena in Semiconductors IV |
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City | San Jose, CA, USA |
Period | 1/27/00 → 1/28/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics