Abstract
Decay of the longitudinal optical (LO) phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and Al xGa 1-xN (x = 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 270-278 |
| Number of pages | 9 |
| Volume | 3940 |
| State | Published - 2000 |
| Event | Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000 |
Other
| Other | Ultrafast Phenomena in Semiconductors IV |
|---|---|
| City | San Jose, CA, USA |
| Period | 1/27/00 → 1/28/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
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Cite this
Tsen, K-T., Ferry, D. K., Goodnick, S., Salvador, A., & Morkoc, H. (2000). Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and Al
xGa
1-xN
In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3940, pp. 270-278). Society of Photo-Optical Instrumentation Engineers.