Raman spectroscopy study of microscopic strain in epitaxial Si1-x-yGexCy alloys

Jose Menendez; P. Gopalan; G. S. Spencer; N. Cave; J. W. Strane

doi:10.1063/1.113843

Raman spectroscopy study of microscopic strain in epitaxial Si_1-x-yGe_xC_y alloys

Jose Menendez, P. Gopalan, G. S. Spencer, N. Cave, J. W. Strane

Physics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

This paper presents the result of a Raman scattering characterization of Si_1-x-yGe_xC_y layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si_1-x-yGe_xC_y layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.

Original language	English (US)
Pages (from-to)	1160-1162
Number of pages	3
Journal	Applied Physics Letters
Volume	66
Issue number	10
DOIs	https://doi.org/10.1063/1.113843
State	Published - Mar 6 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.113843

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title = "Raman spectroscopy study of microscopic strain in epitaxial Si1-x-yGexCy alloys",

abstract = "This paper presents the result of a Raman scattering characterization of Si1-x-yGexCy layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si1-x-yGexCy layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.",

author = "Jose Menendez and P. Gopalan and Spencer, {G. S.} and N. Cave and Strane, {J. W.}",

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AU - Menendez, Jose

AU - Gopalan, P.

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AU - Cave, N.

AU - Strane, J. W.

PY - 1995/3/6

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N2 - This paper presents the result of a Raman scattering characterization of Si1-x-yGexCy layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si1-x-yGexCy layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.

AB - This paper presents the result of a Raman scattering characterization of Si1-x-yGexCy layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si1-x-yGexCy layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.

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Raman spectroscopy study of microscopic strain in epitaxial Si_1-x-yGe_xC_y alloys

Abstract

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