Raman spectroscopy study of microscopic strain in epitaxial Si1-x-yGexCy alloys

Jose Menendez, P. Gopalan, G. S. Spencer, N. Cave, J. W. Strane

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


This paper presents the result of a Raman scattering characterization of Si1-x-yGexCy layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si1-x-yGexCy layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.

Original languageEnglish (US)
Pages (from-to)1160-1162
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - Mar 6 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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