Raman spectroscopy is used to characterize the microscopic bond structure of Si1-x-yGexCy alloys epitaxially grown on Si substrates by C implantation into Si1-xGex epilayers and subsequent annealing. The Ge and C concentrations in these alloys can be chosen so that its average lattice constant equals the lattice constant of Si. Our Raman results suggest that in these strain-compensated alloys the Si-Si bonds are not identical to those in bulk Si but experience a considerable local deformation.
|Original language||English (US)|
|Number of pages||1|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1995|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)