Raman spectroscopy study of microscopic strain in epitaxial Si 1-x-yGexC alloys

Jose Menendez, P. Gopalan, G. S. Spencer, N. Cave, J. W. Strane

Research output: Contribution to journalArticlepeer-review


Raman spectroscopy is used to characterize the microscopic bond structure of Si1-x-yGexCy alloys epitaxially grown on Si substrates by C implantation into Si1-xGex epilayers and subsequent annealing. The Ge and C concentrations in these alloys can be chosen so that its average lattice constant equals the lattice constant of Si. Our Raman results suggest that in these strain-compensated alloys the Si-Si bonds are not identical to those in bulk Si but experience a considerable local deformation.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Raman spectroscopy study of microscopic strain in epitaxial Si <sub>1-x-y</sub>Ge<sub>x</sub>C alloys'. Together they form a unique fingerprint.

Cite this