Raman spectroscopy for characterization of hard, wide-bandgap semiconductors

Diamond, GaN, GaA1N, A1N, BN

Leah Bergman, Robert Nemanich

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

This paper reviews the Raman spectroscopy of diamond films, GaN, AlxGa1-xN alloys, A1N, and BN. The review focuses on the use of Raman spectroscopy to characterize various physical aspects such as stress, temperature, and microstructure, as determined by their influence on the Raman active modes manifested by the Raman lineshape. The phononplasmon interaction in GaN due to the characteristic unintentional n-type doping of this material is also discussed. Furthermore, a short summary of the behavior of the optical modes of mixed alloys is presented, followed by a discussion of the Raman characteristics of AlxGa1-xN alloy.

Original languageEnglish (US)
Pages (from-to)551-579
Number of pages29
JournalAnnual Review of Materials Science
Volume26
Issue number1
StatePublished - 1996
Externally publishedYes

Fingerprint

Diamond
Raman spectroscopy
Diamonds
Energy gap
Semiconductor materials
Diamond films
Doping (additives)
Microstructure
Temperature

Keywords

  • Diamond films
  • Raman lineshape
  • Stress
  • Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Raman spectroscopy for characterization of hard, wide-bandgap semiconductors : Diamond, GaN, GaA1N, A1N, BN. / Bergman, Leah; Nemanich, Robert.

In: Annual Review of Materials Science, Vol. 26, No. 1, 1996, p. 551-579.

Research output: Contribution to journalArticle

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