TY - JOUR
T1 - Raman spectroscopy for characterization of hard, wide-bandgap semiconductors
T2 - Diamond, GaN, GaA1N, A1N, BN
AU - Bergman, Leah
AU - Nemanich, Robert J.
PY - 1996
Y1 - 1996
N2 - This paper reviews the Raman spectroscopy of diamond films, GaN, AlxGa1-xN alloys, A1N, and BN. The review focuses on the use of Raman spectroscopy to characterize various physical aspects such as stress, temperature, and microstructure, as determined by their influence on the Raman active modes manifested by the Raman lineshape. The phononplasmon interaction in GaN due to the characteristic unintentional n-type doping of this material is also discussed. Furthermore, a short summary of the behavior of the optical modes of mixed alloys is presented, followed by a discussion of the Raman characteristics of AlxGa1-xN alloy.
AB - This paper reviews the Raman spectroscopy of diamond films, GaN, AlxGa1-xN alloys, A1N, and BN. The review focuses on the use of Raman spectroscopy to characterize various physical aspects such as stress, temperature, and microstructure, as determined by their influence on the Raman active modes manifested by the Raman lineshape. The phononplasmon interaction in GaN due to the characteristic unintentional n-type doping of this material is also discussed. Furthermore, a short summary of the behavior of the optical modes of mixed alloys is presented, followed by a discussion of the Raman characteristics of AlxGa1-xN alloy.
KW - Diamond films
KW - Raman lineshape
KW - Stress
KW - Temperature
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U2 - 10.1146/annurev.ms.26.080196.003003
DO - 10.1146/annurev.ms.26.080196.003003
M3 - Article
AN - SCOPUS:0029712611
SN - 1531-7331
VL - 26
SP - 551
EP - 579
JO - Annual Review of Materials Research
JF - Annual Review of Materials Research
IS - 1
ER -