Raman scattering study of interface reactions of Co/SiGe

Hong Ying, Zhihai Wang, D. B. Aldrich, D. E. Sayers, R. J. Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Raman scattering measurements are used to characterize Co/Si, Co/Ge and Co/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co - CoSi - CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge7 and CoGe2 phases were observed. For Co/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

Original languageEnglish (US)
Title of host publicationSilicides, Germanides, and Their Interfaces
EditorsRobert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
PublisherPubl by Materials Research Society
Pages335-340
Number of pages6
ISBN (Print)1558992197
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume320
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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