Raman scattering study of interface reactions of Co/SiGe

Hong Ying, Zhihai Wang, D. B. Aldrich, D. E. Sayers, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Raman scattering measurements are used to characterize Co/Si, Co/Ge and Co/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co - CoSi - CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge7 and CoGe2 phases were observed. For Co/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsRobert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages335-340
Number of pages6
Volume320
ISBN (Print)1558992197
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

Fingerprint

Raman spectroscopy
Raman scattering
Phase transitions
Thin films
Si-Ge alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ying, H., Wang, Z., Aldrich, D. B., Sayers, D. E., & Nemanich, R. (1994). Raman scattering study of interface reactions of Co/SiGe. In R. W. Fathauer, S. Mantl, L. J. Schowalter, & K. N. Tu (Eds.), Materials Research Society Symposium Proceedings (Vol. 320, pp. 335-340). Pittsburgh, PA, United States: Publ by Materials Research Society.

Raman scattering study of interface reactions of Co/SiGe. / Ying, Hong; Wang, Zhihai; Aldrich, D. B.; Sayers, D. E.; Nemanich, Robert.

Materials Research Society Symposium Proceedings. ed. / Robert W. Fathauer; Siegfried Mantl; Leo J. Schowalter; K.N. Tu. Vol. 320 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. p. 335-340.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ying, H, Wang, Z, Aldrich, DB, Sayers, DE & Nemanich, R 1994, Raman scattering study of interface reactions of Co/SiGe. in RW Fathauer, S Mantl, LJ Schowalter & KN Tu (eds), Materials Research Society Symposium Proceedings. vol. 320, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 335-340, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Ying H, Wang Z, Aldrich DB, Sayers DE, Nemanich R. Raman scattering study of interface reactions of Co/SiGe. In Fathauer RW, Mantl S, Schowalter LJ, Tu KN, editors, Materials Research Society Symposium Proceedings. Vol. 320. Pittsburgh, PA, United States: Publ by Materials Research Society. 1994. p. 335-340
Ying, Hong ; Wang, Zhihai ; Aldrich, D. B. ; Sayers, D. E. ; Nemanich, Robert. / Raman scattering study of interface reactions of Co/SiGe. Materials Research Society Symposium Proceedings. editor / Robert W. Fathauer ; Siegfried Mantl ; Leo J. Schowalter ; K.N. Tu. Vol. 320 Pittsburgh, PA, United States : Publ by Materials Research Society, 1994. pp. 335-340
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