@inproceedings{cf8e230db7864e73829d92007e7752d7,
title = "Raman scattering study of interface reactions of Co/SiGe",
abstract = "Raman scattering measurements are used to characterize Co/Si, Co/Ge and Co/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co - CoSi - CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge7 and CoGe2 phases were observed. For Co/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.",
author = "Hong Ying and Zhihai Wang and Aldrich, {D. B.} and Sayers, {D. E.} and Nemanich, {R. J.}",
year = "1994",
month = jan,
day = "1",
language = "English (US)",
isbn = "1558992197",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "335--340",
editor = "Fathauer, {Robert W.} and Siegfried Mantl and Schowalter, {Leo J.} and K.N. Tu",
booktitle = "Silicides, Germanides, and Their Interfaces",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}