Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles

Minseo Park, S. M. Camphausen, A. F. Myers, P. T. Barletta, V. Sakhrani, L. Bergman, R. J. Nemanich, Jerome J. Cuomo

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Amorphous carbon (txa-C1-x) films were prepped by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp2/sp3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions.

Original languageEnglish (US)
Pages (from-to)229-233
Number of pages5
JournalMaterials Letters
Volume41
Issue number5
DOIs
StatePublished - Dec 1999
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, M., Camphausen, S. M., Myers, A. F., Barletta, P. T., Sakhrani, V., Bergman, L., Nemanich, R. J., & Cuomo, J. J. (1999). Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. Materials Letters, 41(5), 229-233. https://doi.org/10.1016/S0167-577X(99)00135-4