Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles

Minseo Park, S. M. Camphausen, A. F. Myers, P. T. Barletta, V. Sakhrani, L. Bergman, Robert Nemanich, Jerome J. Cuomo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Amorphous carbon (txa-C1-x) films were prepped by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp2/sp3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions.

Original languageEnglish (US)
Pages (from-to)229-233
Number of pages5
JournalMaterials Letters
Volume41
Issue number5
DOIs
StatePublished - Dec 1999
Externally publishedYes

Fingerprint

Amorphous carbon
Raman scattering
Electron energy loss spectroscopy
Raman spectra
carbon
incidence
energy dissipation
electron energy
Raman spectroscopy
Carbon
spectroscopy
Transmission electron microscopy
arcs
Substrates
transmission electron microscopy
shift

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Park, M., Camphausen, S. M., Myers, A. F., Barletta, P. T., Sakhrani, V., Bergman, L., ... Cuomo, J. J. (1999). Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. Materials Letters, 41(5), 229-233. https://doi.org/10.1016/S0167-577X(99)00135-4

Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. / Park, Minseo; Camphausen, S. M.; Myers, A. F.; Barletta, P. T.; Sakhrani, V.; Bergman, L.; Nemanich, Robert; Cuomo, Jerome J.

In: Materials Letters, Vol. 41, No. 5, 12.1999, p. 229-233.

Research output: Contribution to journalArticle

Park, M, Camphausen, SM, Myers, AF, Barletta, PT, Sakhrani, V, Bergman, L, Nemanich, R & Cuomo, JJ 1999, 'Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles', Materials Letters, vol. 41, no. 5, pp. 229-233. https://doi.org/10.1016/S0167-577X(99)00135-4
Park M, Camphausen SM, Myers AF, Barletta PT, Sakhrani V, Bergman L et al. Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. Materials Letters. 1999 Dec;41(5):229-233. https://doi.org/10.1016/S0167-577X(99)00135-4
Park, Minseo ; Camphausen, S. M. ; Myers, A. F. ; Barletta, P. T. ; Sakhrani, V. ; Bergman, L. ; Nemanich, Robert ; Cuomo, Jerome J. / Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. In: Materials Letters. 1999 ; Vol. 41, No. 5. pp. 229-233.
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