Raman scattering in Ge1-ySny alloys

V. R. D'Costa, J. Tolle, R. Roucka, C. D. Poweleit, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

The Raman spectrum of nearly relaxed Ge1-ySny alloys grown on Si substrates was investigated for Sn concentrations y < 0.2. The frequency dependence of the Ge-Ge Raman mode was re-evaluated by carrying out careful corrections for residual strain shifts. The Ge-Sn mode was observed for the first time in this type of samples. Its frequency appears to decrease monotonically as a function of the Sn concentration. This is very different from the behavior of the Si-Ge mode in Si1-yGey alloys, but a detailed analysis suggest that there is a scaling relationship between these modes that is the analog of the scaling relationship found earlier for the Ge-Ge mode. Raman activity is also found in the spectral range where Sn-Sn modes are expected, but the polarization properties of these features suggest an overlap with disorder-activated Ge-acoustic phonons. Additional features observed in "forbidden" scattering configurations are also assigned to disorder-activated Raman scattering.

Original languageEnglish (US)
Pages (from-to)240-244
Number of pages5
JournalSolid State Communications
Volume144
Issue number5-6
DOIs
StatePublished - Nov 2007

Fingerprint

Raman scattering
Raman spectra
Phonons
Acoustics
Scattering
Polarization
Substrates
disorders
scaling
phonons
analogs
acoustics
shift
polarization
configurations
scattering

Keywords

  • A. Semiconductors
  • D. Raman scattering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Raman scattering in Ge1-ySny alloys. / D'Costa, V. R.; Tolle, J.; Roucka, R.; Poweleit, C. D.; Kouvetakis, John; Menendez, Jose.

In: Solid State Communications, Vol. 144, No. 5-6, 11.2007, p. 240-244.

Research output: Contribution to journalArticle

D'Costa, VR, Tolle, J, Roucka, R, Poweleit, CD, Kouvetakis, J & Menendez, J 2007, 'Raman scattering in Ge1-ySny alloys', Solid State Communications, vol. 144, no. 5-6, pp. 240-244. https://doi.org/10.1016/j.ssc.2007.08.020
D'Costa, V. R. ; Tolle, J. ; Roucka, R. ; Poweleit, C. D. ; Kouvetakis, John ; Menendez, Jose. / Raman scattering in Ge1-ySny alloys. In: Solid State Communications. 2007 ; Vol. 144, No. 5-6. pp. 240-244.
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