Raman scattering from phonons in polymorphs of Si and Ge

R. J. Kobliska, S. A. Solin, M. Selders, R. K. Chang, R. Alben, Michael Thorpe, D. Weaire

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.

Original languageEnglish (US)
Pages (from-to)725-728
Number of pages4
JournalPhysical Review Letters
Volume29
Issue number11
DOIs
StatePublished - 1972
Externally publishedYes

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phonons
Raman spectroscopy
Raman spectra
cells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kobliska, R. J., Solin, S. A., Selders, M., Chang, R. K., Alben, R., Thorpe, M., & Weaire, D. (1972). Raman scattering from phonons in polymorphs of Si and Ge. Physical Review Letters, 29(11), 725-728. https://doi.org/10.1103/PhysRevLett.29.725

Raman scattering from phonons in polymorphs of Si and Ge. / Kobliska, R. J.; Solin, S. A.; Selders, M.; Chang, R. K.; Alben, R.; Thorpe, Michael; Weaire, D.

In: Physical Review Letters, Vol. 29, No. 11, 1972, p. 725-728.

Research output: Contribution to journalArticle

Kobliska, RJ, Solin, SA, Selders, M, Chang, RK, Alben, R, Thorpe, M & Weaire, D 1972, 'Raman scattering from phonons in polymorphs of Si and Ge', Physical Review Letters, vol. 29, no. 11, pp. 725-728. https://doi.org/10.1103/PhysRevLett.29.725
Kobliska RJ, Solin SA, Selders M, Chang RK, Alben R, Thorpe M et al. Raman scattering from phonons in polymorphs of Si and Ge. Physical Review Letters. 1972;29(11):725-728. https://doi.org/10.1103/PhysRevLett.29.725
Kobliska, R. J. ; Solin, S. A. ; Selders, M. ; Chang, R. K. ; Alben, R. ; Thorpe, Michael ; Weaire, D. / Raman scattering from phonons in polymorphs of Si and Ge. In: Physical Review Letters. 1972 ; Vol. 29, No. 11. pp. 725-728.
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