Raman scattering from phonons in polymorphs of Si and Ge

R. J. Kobliska; S. A. Solin; M. Selders; R. K. Chang; R. Alben; M. F. Thorpe; D. Weaire

doi:10.1103/PhysRevLett.29.725

Raman scattering from phonons in polymorphs of Si and Ge

R. J. Kobliska, S. A. Solin, M. Selders, R. K. Chang, R. Alben, M. F. Thorpe, D. Weaire

Arizona State University

Research output: Contribution to journal › Article

72 Scopus citations

Abstract

The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.

Original language	English (US)
Pages (from-to)	725-728
Number of pages	4
Journal	Physical Review Letters
Volume	29
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.29.725
State	Published - Jan 1 1972

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Kobliska, R. J., Solin, S. A., Selders, M., Chang, R. K., Alben, R., Thorpe, M. F., & Weaire, D. (1972). Raman scattering from phonons in polymorphs of Si and Ge. Physical Review Letters, 29(11), 725-728. https://doi.org/10.1103/PhysRevLett.29.725

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AU - Thorpe, M. F.

AU - Weaire, D.

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Access to Document

10.1103/PhysRevLett.29.725