Raman scattering from phonons in polymorphs of Si and Ge

R. J. Kobliska, S. A. Solin, M. Selders, R. K. Chang, R. Alben, M. F. Thorpe, D. Weaire

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72 Scopus citations

Abstract

The vibrational properties of Si III and Ge III have been studied experimentally using Raman spectroscopy, and theoretically using a simple force-constant model. Si III and Ge III are metastable crystalline phases with large unit cells and distorted tetrahedral bonding.

Original languageEnglish (US)
Pages (from-to)725-728
Number of pages4
JournalPhysical Review Letters
Volume29
Issue number11
DOIs
StatePublished - Jan 1 1972

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kobliska, R. J., Solin, S. A., Selders, M., Chang, R. K., Alben, R., Thorpe, M. F., & Weaire, D. (1972). Raman scattering from phonons in polymorphs of Si and Ge. Physical Review Letters, 29(11), 725-728. https://doi.org/10.1103/PhysRevLett.29.725