Raman scattering from hydrogenated amorphous silicon

S. A. Lyon, Robert Nemanich

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The Raman scattering from amorphous silicon has been obtained to within 7 cm-1 of the exciting laser line. For hydrogenated silicon the Raman intensity does not go to zero at zero frequency as expected for a Debye solid. Instead, the Raman spectrum is essentially flat for energy shifts below approximately 50 cm-1. Amorphous silicon without hydrogen, produced by ion implantation of arsenic into single crystal silicon, showed at least a factor of 5 less scattering at low energies than heavily hydrogenated films. The temperature dependence of the intensity of the low frequency scattering could not be described by usual one-phonon or two-phonon processes. Similar low frequency scattering has been previously observed from glasses and interpreted in terms of thermally activated relaxation of two-level systems. The data indicate that the incorporation of hydrogen in amorphous silicon produces two-level systems.

Original languageEnglish (US)
Pages (from-to)871-873
Number of pages3
JournalPhysica B+C
Volume117-118
Issue numberPART 2
DOIs
StatePublished - 1983
Externally publishedYes

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Amorphous silicon
Raman scattering
Scattering
Silicon
Hydrogen
Arsenic
Ion implantation
Single crystals
Glass
Lasers
Temperature

Cite this

Raman scattering from hydrogenated amorphous silicon. / Lyon, S. A.; Nemanich, Robert.

In: Physica B+C, Vol. 117-118, No. PART 2, 1983, p. 871-873.

Research output: Contribution to journalArticle

Lyon, S. A. ; Nemanich, Robert. / Raman scattering from hydrogenated amorphous silicon. In: Physica B+C. 1983 ; Vol. 117-118, No. PART 2. pp. 871-873.
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