RAMAN SCATTERING FROM HYDROGENATED AMORPHOUS SILICON.

S. A. Lyon, Robert Nemanich

Research output: Contribution to journalArticle

Abstract

The Raman scattering from amorphous silicon has been obtained to within 7 cm** minus **1 of the exciting laser line. For hydrogenated silicon the Raman intensity does not go to zero at zero frequency as expected for a Debye solid. Instead, the Raman spectrum is essentially flat for energy shifts below approximately 50 cm** minus **1. Amorphous silicon without hydrogen, produced by ion implantation of arsenic into single crystal silicon, showed at a least a factor of 5 less scattering at low energies than heavily hydrogenated films. The temperature dependence of the intensity of the low frequency scattering could not be described by usual one-phonon or two-phonon proceses.

Original languageEnglish (US)
Pages (from-to)871-873
Number of pages3
JournalPhysica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Volume117-118
Issue numberPt II
StatePublished - Mar 1982
Externally publishedYes

Fingerprint

Amorphous silicon
Raman scattering
Scattering
Silicon
Arsenic
Ion implantation
Single crystals
Hydrogen
Lasers
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

RAMAN SCATTERING FROM HYDROGENATED AMORPHOUS SILICON. / Lyon, S. A.; Nemanich, Robert.

In: Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, Vol. 117-118, No. Pt II, 03.1982, p. 871-873.

Research output: Contribution to journalArticle

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