The Raman scattering from amorphous silicon has been obtained to within 7 cm** minus **1 of the exciting laser line. For hydrogenated silicon the Raman intensity does not go to zero at zero frequency as expected for a Debye solid. Instead, the Raman spectrum is essentially flat for energy shifts below approximately 50 cm** minus **1. Amorphous silicon without hydrogen, produced by ion implantation of arsenic into single crystal silicon, showed at a least a factor of 5 less scattering at low energies than heavily hydrogenated films. The temperature dependence of the intensity of the low frequency scattering could not be described by usual one-phonon or two-phonon proceses.
|Original language||English (US)|
|Number of pages||3|
|Journal||Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics|
|Issue number||Pt II|
|State||Published - Mar 1982|
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