Raman scattering for semiconductor interface analysis

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The applications of Raman spectroscopy to study semiconductor interfaces and the initial phases of interface formation is described. The limitations of weak signal from interface structures has proved a severe limitation, but it has recently been shown that multi-layered thin film structures can be made which utilyze optical interference properties to enhance the Raman scattering from thin films and thin film interfaces. This technique (termed IERS) has been applied to study several metal-Silicon interfaces. An even more difficult problem is the study of interface formation during ultra high vacuum (UHV) deposition on atomically clean surfaces. The experimental considerations from in situ UHV Raman scattering will be described. The results of Raman scattering for the interface of Pd deposited on crystalline and amorphous Si are presented. Both the IERS and in situ UHV measurements are used to explore the mechanisms of silicide formation.

Original languageEnglish (US)
Pages (from-to)173-178
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume794
DOIs
StatePublished - Apr 22 1987
Externally publishedYes

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

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