Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates

T. P. Humphreys, J. B. Posthill, K. Das, C. A. Sukow, R. J. Nemanichi, N. R. Parikh, A. Majeed

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report results pertaining to the measurement of strain by Raman spectroscopy in GaAs epitaxial films grown by molecular beam epitaxy on sapphire and silicon-on-sapphire substrates. Comparative studies indicate that the GaAs layers deposited directly on sapphire substrates show no measurable strain, and only a small residual tensile strain is observed in the films grown on silicon-on-sapphire substrates. The magnitude of the strain in the GaAs/silicon-on-sapphire heterostructures is reduced by over a factor of 4.5 as compared to that observed in the GaAs films deposited directly on single-crystal silicon (100) substrates under the same growth conditions

Original languageEnglish (US)
Pages (from-to)L1595-L1598
JournalJapanese Journal of Applied Physics
Volume28
Issue number9 A
DOIs
StatePublished - Sep 1 1989
Externally publishedYes

Keywords

  • Absorption spectrum
  • Excitation spectrum
  • Fluorescence decay time
  • Fluorescence spectrum
  • Pyrene-doped amorphous silica glass
  • Sol-gel method

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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