Raman scattering by the coupled plasmon LO-phonon modes near the E0 0 gap of n-type GaAs: Resonance and interference effects

V. Vorlek, I. Gregora, W. Kauschke, Jose Menendez, M. Cardona

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9 Citations (Scopus)

Abstract

The semiclassical model of Klein, extended to the case of an absorbing medium, is used to discuss Raman scattering by coupled plasmon LO-phonon modes in n-type GaAs near the E0 0 gap. A reasonably quantitative agreement between the calculated and measured squared Raman polarizabilities is found below resonance, whereas additional assumptions are necessary to achieve comparable results above it. Exactly at resonance, the model predicts a behavior somewhat different from the observed one.

Original languageEnglish (US)
Pages (from-to)5802-5808
Number of pages7
JournalPhysical Review B
Volume42
Issue number9
DOIs
StatePublished - 1990

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Raman scattering
Raman spectra
interference
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

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Raman scattering by the coupled plasmon LO-phonon modes near the E0 0 gap of n-type GaAs : Resonance and interference effects. / Vorlek, V.; Gregora, I.; Kauschke, W.; Menendez, Jose; Cardona, M.

In: Physical Review B, Vol. 42, No. 9, 1990, p. 5802-5808.

Research output: Contribution to journalArticle

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