Raman scattering by the coupled plasmon LO-phonon modes near the E0 0 gap of n-type GaAs: Resonance and interference effects

V. Vorlek; I. Gregora; W. Kauschke; Jose Menendez; M. Cardona

doi:10.1103/PhysRevB.42.5802

Raman scattering by the coupled plasmon LO-phonon modes near the E0 0 gap of n-type GaAs: Resonance and interference effects

V. Vorlek, I. Gregora, W. Kauschke, Jose Menendez, M. Cardona

CLAS-NS: Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The semiclassical model of Klein, extended to the case of an absorbing medium, is used to discuss Raman scattering by coupled plasmon LO-phonon modes in n-type GaAs near the E0 0 gap. A reasonably quantitative agreement between the calculated and measured squared Raman polarizabilities is found below resonance, whereas additional assumptions are necessary to achieve comparable results above it. Exactly at resonance, the model predicts a behavior somewhat different from the observed one.

Original language	English (US)
Pages (from-to)	5802-5808
Number of pages	7
Journal	Physical Review B
Volume	42
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevB.42.5802
State	Published - Jan 1 1990

ASJC Scopus subject areas

Condensed Matter Physics

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AU - Menendez, Jose

AU - Cardona, M.

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AB - The semiclassical model of Klein, extended to the case of an absorbing medium, is used to discuss Raman scattering by coupled plasmon LO-phonon modes in n-type GaAs near the E0 0 gap. A reasonably quantitative agreement between the calculated and measured squared Raman polarizabilities is found below resonance, whereas additional assumptions are necessary to achieve comparable results above it. Exactly at resonance, the model predicts a behavior somewhat different from the observed one.

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Raman scattering by the coupled plasmon LO-phonon modes near the E0 0 gap of n-type GaAs: Resonance and interference effects

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