Raman scattering by interface phonons in GaAs-AlAs multiple-quantum-well structures: Correlation between Raman and high-resolution electron microscopy results

Kong-Thon Tsen, David Smith, S. C Y Tsen, Nathan S. Kumar, H. Morkoc

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in GaAs-AlAs multiple quantum-well structures have been studied. By correlating the Raman results with observations by high-resolution electron microscopy, it has been demonstrated that Raman scattering from interface phonons depends strongly on the sample quality. For a relatively smooth interface with about 1-2 monolayers of interface roughness, the Raman signal is governed primarily by the impurity if the impurity concentration inside the GaAs layers is greater than about 2×10 16 cm-3. On the other hand, for nominally undoped quantum-well structures, the Raman signal can be dominated by interface roughness if the interfaces are sufficiently distorted.

Original languageEnglish (US)
Pages (from-to)418-421
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number1
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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