Raman scattering by interface phonons in GaAs-AlAs multiple-quantum-well structures

Correlation between Raman and high-resolution electron microscopy results

Kong-Thon Tsen, David Smith, S. C Y Tsen, Nathan S. Kumar, H. Morkoc

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12 Citations (Scopus)

Abstract

The effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in GaAs-AlAs multiple quantum-well structures have been studied. By correlating the Raman results with observations by high-resolution electron microscopy, it has been demonstrated that Raman scattering from interface phonons depends strongly on the sample quality. For a relatively smooth interface with about 1-2 monolayers of interface roughness, the Raman signal is governed primarily by the impurity if the impurity concentration inside the GaAs layers is greater than about 2×10 16 cm-3. On the other hand, for nominally undoped quantum-well structures, the Raman signal can be dominated by interface roughness if the interfaces are sufficiently distorted.

Original languageEnglish (US)
Pages (from-to)418-421
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number1
DOIs
StatePublished - 1991

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electron microscopy
phonons
quantum wells
Raman spectra
high resolution
roughness
impurities

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Raman scattering by interface phonons in GaAs-AlAs multiple-quantum-well structures: Correlation between Raman and high-resolution electron microscopy results",
abstract = "The effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in GaAs-AlAs multiple quantum-well structures have been studied. By correlating the Raman results with observations by high-resolution electron microscopy, it has been demonstrated that Raman scattering from interface phonons depends strongly on the sample quality. For a relatively smooth interface with about 1-2 monolayers of interface roughness, the Raman signal is governed primarily by the impurity if the impurity concentration inside the GaAs layers is greater than about 2×10 16 cm-3. On the other hand, for nominally undoped quantum-well structures, the Raman signal can be dominated by interface roughness if the interfaces are sufficiently distorted.",
author = "Kong-Thon Tsen and David Smith and Tsen, {S. C Y} and Kumar, {Nathan S.} and H. Morkoc",
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T1 - Raman scattering by interface phonons in GaAs-AlAs multiple-quantum-well structures

T2 - Correlation between Raman and high-resolution electron microscopy results

AU - Tsen, Kong-Thon

AU - Smith, David

AU - Tsen, S. C Y

AU - Kumar, Nathan S.

AU - Morkoc, H.

PY - 1991

Y1 - 1991

N2 - The effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in GaAs-AlAs multiple quantum-well structures have been studied. By correlating the Raman results with observations by high-resolution electron microscopy, it has been demonstrated that Raman scattering from interface phonons depends strongly on the sample quality. For a relatively smooth interface with about 1-2 monolayers of interface roughness, the Raman signal is governed primarily by the impurity if the impurity concentration inside the GaAs layers is greater than about 2×10 16 cm-3. On the other hand, for nominally undoped quantum-well structures, the Raman signal can be dominated by interface roughness if the interfaces are sufficiently distorted.

AB - The effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in GaAs-AlAs multiple quantum-well structures have been studied. By correlating the Raman results with observations by high-resolution electron microscopy, it has been demonstrated that Raman scattering from interface phonons depends strongly on the sample quality. For a relatively smooth interface with about 1-2 monolayers of interface roughness, the Raman signal is governed primarily by the impurity if the impurity concentration inside the GaAs layers is greater than about 2×10 16 cm-3. On the other hand, for nominally undoped quantum-well structures, the Raman signal can be dominated by interface roughness if the interfaces are sufficiently distorted.

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