Raman probe of the large wavevector TA phonon bottleneck in GaAs

Kong-Thon Tsen, D. A. Abramsohn, Ralph Bray

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have probed the modes, frequencies and populations of non-equilibrium large wave-vector TA phonons in GaAs, participating in the bottleneck in decay at low temperature. The excess phonons were generated as a by-product of intense pulsed Nd:YA1G laser excitation of electrons from deep traps, and were probed in situ by 90° second-order Raman scattering of the same laser beam.

Original languageEnglish (US)
Pages (from-to)543-545
Number of pages3
JournalPhysica B+C
Volume117-118
Issue numberPART 1
DOIs
StatePublished - 1983
Externally publishedYes

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Phonons
Laser excitation
Laser beams
Byproducts
Raman scattering
Electrons
Temperature

Cite this

Raman probe of the large wavevector TA phonon bottleneck in GaAs. / Tsen, Kong-Thon; Abramsohn, D. A.; Bray, Ralph.

In: Physica B+C, Vol. 117-118, No. PART 1, 1983, p. 543-545.

Research output: Contribution to journalArticle

Tsen, Kong-Thon ; Abramsohn, D. A. ; Bray, Ralph. / Raman probe of the large wavevector TA phonon bottleneck in GaAs. In: Physica B+C. 1983 ; Vol. 117-118, No. PART 1. pp. 543-545.
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