Raman investigation of strong quasi-direct optical transitions in ultrathin GaAsAIAs superlattices

Jose Menendez, A. Pinczuk, J. P. Valladares, L. N. Pfeiffer, K. W. West, A. C. Gossard, J. H. English

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We investigate optical transitions in ultrathin (GaAs)n(AlAs)n superlattices using resonance Raman scattering. For n = 1, 2, we find that superlattice-induced or "quasidirect" transitions have an oscillator strength comparable to bulk-like direct transitions. Theory, on the other hand, predicts the quasidirect transitions to be orders of magnitude weaker. Our results suggest that the discrepancy is due to Γ-X mixing in the conduction band of the superlattices. For bulk-like transitions, we find that the thickness dependence of energy and wavefunction localization disagrees with predictions based on effective-mass theory.

Original languageEnglish (US)
Pages (from-to)65-68
Number of pages4
JournalSurface Science
Volume228
Issue number1-3
DOIs
StatePublished - Apr 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Raman investigation of strong quasi-direct optical transitions in ultrathin GaAsAIAs superlattices'. Together they form a unique fingerprint.

  • Cite this

    Menendez, J., Pinczuk, A., Valladares, J. P., Pfeiffer, L. N., West, K. W., Gossard, A. C., & English, J. H. (1990). Raman investigation of strong quasi-direct optical transitions in ultrathin GaAsAIAs superlattices. Surface Science, 228(1-3), 65-68. https://doi.org/10.1016/0039-6028(90)90260-F