Raman imaging of patterned silicon using a solid immersion lens

C. D. Poweleit, A. Gunther, Stephen Goodnick, Jose Menendez

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We show an enhanced spatial resolution using a solid immersion lens by directly imaging the Raman scattered light from silicon masked by periodic metal lines. A glass hemisphere solid immersion lens with an index of refraction n=1.868 at 488 nm is used in conjunction with a 100×0.8 numerical aperture objective to obtain the enhanced spatial resolution. The increased numerical aperture is demonstrated by a direct line scan over the periodic metal lines. Compared with near-field optical microscopy, the solid immersion lens technique overcomes the difficulty of limited excitation power obtainable with tapered fibers, while providing excellent spatial resolution which in principle could be extended to the 0.1 μm range.

Original languageEnglish (US)
Pages (from-to)2275-2277
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number16
DOIs
StatePublished - 1998

Fingerprint

submerging
spatial resolution
lenses
numerical aperture
silicon
hemispheres
metals
refraction
near fields
microscopy
fibers
glass
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Raman imaging of patterned silicon using a solid immersion lens. / Poweleit, C. D.; Gunther, A.; Goodnick, Stephen; Menendez, Jose.

In: Applied Physics Letters, Vol. 73, No. 16, 1998, p. 2275-2277.

Research output: Contribution to journalArticle

@article{ea338d5949a841a19da21ad634b24bfe,
title = "Raman imaging of patterned silicon using a solid immersion lens",
abstract = "We show an enhanced spatial resolution using a solid immersion lens by directly imaging the Raman scattered light from silicon masked by periodic metal lines. A glass hemisphere solid immersion lens with an index of refraction n=1.868 at 488 nm is used in conjunction with a 100×0.8 numerical aperture objective to obtain the enhanced spatial resolution. The increased numerical aperture is demonstrated by a direct line scan over the periodic metal lines. Compared with near-field optical microscopy, the solid immersion lens technique overcomes the difficulty of limited excitation power obtainable with tapered fibers, while providing excellent spatial resolution which in principle could be extended to the 0.1 μm range.",
author = "Poweleit, {C. D.} and A. Gunther and Stephen Goodnick and Jose Menendez",
year = "1998",
doi = "10.1063/1.121700",
language = "English (US)",
volume = "73",
pages = "2275--2277",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Raman imaging of patterned silicon using a solid immersion lens

AU - Poweleit, C. D.

AU - Gunther, A.

AU - Goodnick, Stephen

AU - Menendez, Jose

PY - 1998

Y1 - 1998

N2 - We show an enhanced spatial resolution using a solid immersion lens by directly imaging the Raman scattered light from silicon masked by periodic metal lines. A glass hemisphere solid immersion lens with an index of refraction n=1.868 at 488 nm is used in conjunction with a 100×0.8 numerical aperture objective to obtain the enhanced spatial resolution. The increased numerical aperture is demonstrated by a direct line scan over the periodic metal lines. Compared with near-field optical microscopy, the solid immersion lens technique overcomes the difficulty of limited excitation power obtainable with tapered fibers, while providing excellent spatial resolution which in principle could be extended to the 0.1 μm range.

AB - We show an enhanced spatial resolution using a solid immersion lens by directly imaging the Raman scattered light from silicon masked by periodic metal lines. A glass hemisphere solid immersion lens with an index of refraction n=1.868 at 488 nm is used in conjunction with a 100×0.8 numerical aperture objective to obtain the enhanced spatial resolution. The increased numerical aperture is demonstrated by a direct line scan over the periodic metal lines. Compared with near-field optical microscopy, the solid immersion lens technique overcomes the difficulty of limited excitation power obtainable with tapered fibers, while providing excellent spatial resolution which in principle could be extended to the 0.1 μm range.

UR - http://www.scopus.com/inward/record.url?scp=0032547592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032547592&partnerID=8YFLogxK

U2 - 10.1063/1.121700

DO - 10.1063/1.121700

M3 - Article

AN - SCOPUS:0032547592

VL - 73

SP - 2275

EP - 2277

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -