Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films

L. Bergman, Robert Nemanich

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

Raman and photoluminescence (PL) spectroscopy have proven to be useful and nondestructive techniques for evaluating the stress of crystals and films. This study extends the two techniques to the analysis of stress in diamond thin films with different impurity concentrations arising from different growth conditions, and shows that the impurities and defects are the main source of the internal stress. First, the investigation focuses on Raman analysis of the nature and sources of stress in diamond films. Second, the stress state of the diamond films is analyzed via PL spectroscopy. The PL stress results are then compared to those from the Raman analysis.

Original languageEnglish (US)
Pages (from-to)6709-6719
Number of pages11
JournalJournal of Applied Physics
Volume78
Issue number11
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

Fingerprint

diamonds
photoluminescence
impurities
thin films
diamond films
spectroscopy
residual stress
defects
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films. / Bergman, L.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 78, No. 11, 01.12.1995, p. 6709-6719.

Research output: Contribution to journalArticle

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