Raman analysis of the configurational disorder in AlxGa1-xN films

Leah Bergman; Michael D. Bremser; William G. Perry; Robert F. Davis; Mitra Dutta; Robert J. Nemanich

doi:10.1063/1.119367

Raman analysis of the configurational disorder in Al_xGa_1-xN films

Leah Bergman, Michael D. Bremser, William G. Perry, Robert F. Davis, Mitra Dutta, Robert J. Nemanich

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Raman analysis of the E2 mode of Al_xGa_1-xN in the composition range 0≤x≤1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x≅0.5 indicative of a random disordered alloy system.

Original language	English (US)
Pages (from-to)	2157-2159
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	15
DOIs	https://doi.org/10.1063/1.119367
State	Published - Oct 13 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.119367

Cite this

@article{96ddd99eb02e416fbc9114bbe62d5878,

title = "Raman analysis of the configurational disorder in AlxGa1-xN films",

abstract = "Raman analysis of the E2 mode of AlxGa1-xN in the composition range 0≤x≤1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x≅0.5 indicative of a random disordered alloy system.",

author = "Leah Bergman and Bremser, {Michael D.} and Perry, {William G.} and Davis, {Robert F.} and Mitra Dutta and Nemanich, {Robert J.}",

year = "1997",

month = oct,

day = "13",

doi = "10.1063/1.119367",

language = "English (US)",

volume = "71",

pages = "2157--2159",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Raman analysis of the configurational disorder in AlxGa1-xN films

AU - Bergman, Leah

AU - Bremser, Michael D.

AU - Perry, William G.

AU - Davis, Robert F.

AU - Dutta, Mitra

AU - Nemanich, Robert J.

PY - 1997/10/13

Y1 - 1997/10/13

N2 - Raman analysis of the E2 mode of AlxGa1-xN in the composition range 0≤x≤1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x≅0.5 indicative of a random disordered alloy system.

AB - Raman analysis of the E2 mode of AlxGa1-xN in the composition range 0≤x≤1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x≅0.5 indicative of a random disordered alloy system.

UR - http://www.scopus.com/inward/record.url?scp=0000981854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000981854&partnerID=8YFLogxK

U2 - 10.1063/1.119367

DO - 10.1063/1.119367

M3 - Article

AN - SCOPUS:0000981854

SN - 0003-6951

VL - 71

SP - 2157

EP - 2159

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Raman analysis of the configurational disorder in Al_xGa_1-xN films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this