Raman analysis of the configurational disorder in AlxGa1-xN films

Leah Bergman, Michael D. Bremser, William G. Perry, Robert F. Davis, Mitra Dutta, Robert J. Nemanich

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65 Scopus citations

Abstract

Raman analysis of the E2 mode of AlxGa1-xN in the composition range 0≤x≤1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x≅0.5 indicative of a random disordered alloy system.

Original languageEnglish (US)
Pages (from-to)2157-2159
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number15
DOIs
StatePublished - Oct 13 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997). Raman analysis of the configurational disorder in AlxGa1-xN films. Applied Physics Letters, 71(15), 2157-2159. https://doi.org/10.1063/1.119367