TY - JOUR
T1 - Raman analysis of phonon lifetimes in aln and gan of wurtzite structure
AU - Bergman, Leah
AU - Alexson, Dimitri
AU - Murphy, P.
AU - Nemanich, R.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999
Y1 - 1999
N2 - Raman analyses of the lifetimes of phonons in GaN and AlN crystallites of wurtzite structure are presented. In order to ensure the accuracy of the measurement of the phonon lifetimes, an experimental procedure to eliminate the broadening due to the finite slit width was performed. The lifetime analyses indicate that the phonon lifetimes in AlN as well as in GaN fall into two main time regimes: a relatively long time of the (Formula presented) mode and much shorter times of the (Formula presented) (Formula presented) and (Formula presented) modes. The lifetimes of the (Formula presented) (Formula presented) (Formula presented) (Formula presented) and (Formula presented) modes of an high-quality AlN crystallite are 4.4, 0.83, 0.91, 0.76, and 0.45 ps, respectively. Moreover, the lifetime of the (Formula presented) mode found in this study is consistent with the current phonon-decay model of that mode in wurtzite structure materials. The lifetimes of (Formula presented) (Formula presented) (Formula presented) and (Formula presented) of a GaN crystallite were found to be 10.1, 1.4, 0.95, and 0.46 ps, respectively. The (Formula presented) mode in the GaN was not observed and its absence is attributed to plasmon damping. The lifetime shortening due to impurities was also studied: the lifetimes of the Raman modes of an AlN crystallite, which contains about two orders of magnitude more Si and C impurities relative to the concentration of the high-quality crystallite were found to be 50% shorter.
AB - Raman analyses of the lifetimes of phonons in GaN and AlN crystallites of wurtzite structure are presented. In order to ensure the accuracy of the measurement of the phonon lifetimes, an experimental procedure to eliminate the broadening due to the finite slit width was performed. The lifetime analyses indicate that the phonon lifetimes in AlN as well as in GaN fall into two main time regimes: a relatively long time of the (Formula presented) mode and much shorter times of the (Formula presented) (Formula presented) and (Formula presented) modes. The lifetimes of the (Formula presented) (Formula presented) (Formula presented) (Formula presented) and (Formula presented) modes of an high-quality AlN crystallite are 4.4, 0.83, 0.91, 0.76, and 0.45 ps, respectively. Moreover, the lifetime of the (Formula presented) mode found in this study is consistent with the current phonon-decay model of that mode in wurtzite structure materials. The lifetimes of (Formula presented) (Formula presented) (Formula presented) and (Formula presented) of a GaN crystallite were found to be 10.1, 1.4, 0.95, and 0.46 ps, respectively. The (Formula presented) mode in the GaN was not observed and its absence is attributed to plasmon damping. The lifetime shortening due to impurities was also studied: the lifetimes of the Raman modes of an AlN crystallite, which contains about two orders of magnitude more Si and C impurities relative to the concentration of the high-quality crystallite were found to be 50% shorter.
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U2 - 10.1103/PhysRevB.59.12977
DO - 10.1103/PhysRevB.59.12977
M3 - Article
AN - SCOPUS:0000110727
SN - 1098-0121
VL - 59
SP - 12977
EP - 12982
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
ER -