Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz

Yu Cao, Gerald J. Brady, Hui Gui, Chris Rutherglen, Michael S. Arnold, Chongwu Zhou

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 k·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.

Original languageEnglish (US)
Pages (from-to)6782-6790
Number of pages9
JournalACS Nano
Volume10
Issue number7
DOIs
StatePublished - Jul 26 2016
Externally publishedYes

Keywords

  • 70 GHz
  • aligned
  • carbon nanotubes
  • linearity
  • polyfluorene-sorted
  • radio frequency
  • record RF performance
  • self-aligned T-shape gate

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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