TY - JOUR
T1 - Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells
AU - Cingolani, R.
AU - Stolz, W.
AU - Zhang, Y. H.
AU - Ploog, K.
N1 - Funding Information:
perform high excitation intensity luminescence measurements in the laboratories of the Gruppo Nazionale di Elettronica Quantistica e Plasmi at the Department of Physics of the University of Ban (Italy). This work has been sponsored by the Bundesministerium für Forschung und Technolo-gie of the Federal Republic of Germany.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1990/3/11
Y1 - 1990/3/11
N2 - We report the results of a detailed spectroscopic investigation of the optical properties of modulation doped GaInAs/AlInAs multiple quantum wells. The radiative recombination processes involve electronic states from the confined free carrier plasma and the photogenerated holes at k=0. The absorption edge is blue-shifted to the Fermi level of the electron plasma. A simple model for the calculation of the emission line-shape reveals information on the energy parameters of the optical transitions and on the band gap renormalization. The occurrence of a Fermi edge singularity in the photoluminscence excitation spectra due to the enhanced electronic correlation in the two-dimensional plasma is discussed. Finally, the effects of the transition from one component (electron) plasma to two component (electron-hole) plasma are studied under intense photoexcitation, showing optical amplification of the free carrier luminescence.
AB - We report the results of a detailed spectroscopic investigation of the optical properties of modulation doped GaInAs/AlInAs multiple quantum wells. The radiative recombination processes involve electronic states from the confined free carrier plasma and the photogenerated holes at k=0. The absorption edge is blue-shifted to the Fermi level of the electron plasma. A simple model for the calculation of the emission line-shape reveals information on the energy parameters of the optical transitions and on the band gap renormalization. The occurrence of a Fermi edge singularity in the photoluminscence excitation spectra due to the enhanced electronic correlation in the two-dimensional plasma is discussed. Finally, the effects of the transition from one component (electron) plasma to two component (electron-hole) plasma are studied under intense photoexcitation, showing optical amplification of the free carrier luminescence.
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U2 - 10.1016/0022-2313(90)90015-4
DO - 10.1016/0022-2313(90)90015-4
M3 - Article
AN - SCOPUS:4243178655
VL - 46
SP - 147
EP - 154
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
IS - 2
ER -