Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells

R. Cingolani, W. Stolz, Y. H. Zhang, K. Ploog

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report the results of a detailed spectroscopic investigation of the optical properties of modulation doped GaInAs/AlInAs multiple quantum wells. The radiative recombination processes involve electronic states from the confined free carrier plasma and the photogenerated holes at k=0. The absorption edge is blue-shifted to the Fermi level of the electron plasma. A simple model for the calculation of the emission line-shape reveals information on the energy parameters of the optical transitions and on the band gap renormalization. The occurrence of a Fermi edge singularity in the photoluminscence excitation spectra due to the enhanced electronic correlation in the two-dimensional plasma is discussed. Finally, the effects of the transition from one component (electron) plasma to two component (electron-hole) plasma are studied under intense photoexcitation, showing optical amplification of the free carrier luminescence.

Original languageEnglish (US)
Pages (from-to)147-154
Number of pages8
JournalJournal of Luminescence
Volume46
Issue number2
DOIs
StatePublished - Mar 11 1990
Externally publishedYes

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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