Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures

Yuan Zhao, Xin Hao Zhao, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-p.m-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Quantum efficiency
Heterojunctions
Luminescence
Indium
Carrier lifetime
Spontaneous emission
Open circuit voltage
Fermi level
Photoluminescence
Substrates

Keywords

  • Cadmium compounds
  • II-VI semiconductor materials
  • Photoluminescence
  • Photovoltaic cells
  • Thin films

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhao, Y., Zhao, X. H., & Zhang, Y-H. (2018). Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366054

Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. / Zhao, Yuan; Zhao, Xin Hao; Zhang, Yong-Hang.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, Y, Zhao, XH & Zhang, Y-H 2018, Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366054
Zhao Y, Zhao XH, Zhang Y-H. Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366054
Zhao, Yuan ; Zhao, Xin Hao ; Zhang, Yong-Hang. / Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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N2 - Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-p.m-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

AB - Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-p.m-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

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