Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures

Yuan Zhao, Xin Hao Zhao, Yong Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-p.m-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2637-2641
Number of pages5
ISBN (Electronic)9781509056057
DOIs
StatePublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • Cadmium compounds
  • II-VI semiconductor materials
  • Photoluminescence
  • Photovoltaic cells
  • Thin films

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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