Abstract

Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency (ηext) of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages545-548
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Quantum efficiency
Heterojunctions
Luminescence
Carrier lifetime
Spontaneous emission
Open circuit voltage
Fermi level
Indium
Photoluminescence
Substrates

Keywords

  • cadmium compounds
  • II-VI semiconductor materials
  • photoluminescence
  • photovoltaic cells
  • thin films

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Zhao, Y., Zhao, X. H., & Zhang, Y-H. (2016). Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 545-548). [7749654] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749654

Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. / Zhao, Yuan; Zhao, Xin Hao; Zhang, Yong-Hang.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 545-548 7749654.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, Y, Zhao, XH & Zhang, Y-H 2016, Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749654, Institute of Electrical and Electronics Engineers Inc., pp. 545-548, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749654
Zhao Y, Zhao XH, Zhang Y-H. Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November. Institute of Electrical and Electronics Engineers Inc. 2016. p. 545-548. 7749654 https://doi.org/10.1109/PVSC.2016.7749654
Zhao, Yuan ; Zhao, Xin Hao ; Zhang, Yong-Hang. / Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. pp. 545-548
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N2 - Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency (ηext) of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

AB - Monocrystalline CdTe/MgCdTe double-heterostructures (DHs) grown on lattice-matched InSb substrate have achieved remarkable carrier-lifetimes up to 3.6 μs recently. In this work, external luminescence quantum efficiency (ηext) of n-type CdTe/MgCdTe DHs is determined using Photoluminescence Quantum Efficiency (PLQE) measurements. The external luminescence quantum efficiency of a 1-μm-thick CdTe/MgCdTe DH indium-doped n-type at 1×1017 cm-3 is measured to be 3.1%, which corresponds to a spontaneous emission quantum efficiency (ηq) of 91±4% Such a high efficiency gives an implied open-circuit voltage (Voc), or quasi-Fermi-level splitting, of 1.13 V. Using hole-selective p-type a-SiCx:H contacts, a highest Voc of 1.096 V was demonstrated using the monocrystalline CdTe/MgCdTe DH absorbers.

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