Direct measurements of radiative coupling effects in GaInP/GaAs/Ge multijunction solar cells are presented. Radiative coupling between the GaInP and GaAs cells is observed by using isotype cells as well as specially fabricated 3-terminal device structures. Spectral response measurements of the GaAs cell in both isotype and 3-terminal approaches are shown to exhibit enhanced quantum efficiency in the short wavelength region under favorable radiative coupling conditions. Additionally, electroluminescence of the GaInP cell is shown to enhance the current output from the GaAs cell using a 3-terminal device structure. One consequence of this effect is the possible influence on the measured J-ratio of a multijunction cell. Consideration of radiative coupling may become increasingly important as multijunction III-V based solar cells - including 4- and 5-junction cells - continue to develop and improve in performance.