Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node

Trevor Thornton, William Lepkowski, Seth J. Wilk, Michael Goryll, Bo Chen, Jason Kam, Bertan Bakkaloglu, Keith Holbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

Original languageEnglish (US)
Title of host publicationIEEE Radiation Effects Data Workshop
DOIs
StatePublished - 2013
Event2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States
Duration: Jul 8 2013 → Jul 12 2013

Other

Other2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
CountryUnited States
CitySan Francisco, CA
Period7/8/13 → 7/12/13

Fingerprint

linear quadratic regulator
dropouts
foundries
SOI (semiconductors)
Foundries
CMOS
Transistors
transistors
field effect transistors
amplifiers
Irradiation
Radiation
irradiation
radiation
Power management

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Nuclear and High Energy Physics

Cite this

Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. / Thornton, Trevor; Lepkowski, William; Wilk, Seth J.; Goryll, Michael; Chen, Bo; Kam, Jason; Bakkaloglu, Bertan; Holbert, Keith.

IEEE Radiation Effects Data Workshop. 2013. 6658204.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Thornton, T, Lepkowski, W, Wilk, SJ, Goryll, M, Chen, B, Kam, J, Bakkaloglu, B & Holbert, K 2013, Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. in IEEE Radiation Effects Data Workshop., 6658204, 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013, San Francisco, CA, United States, 7/8/13. https://doi.org/10.1109/REDW.2013.6658204
Thornton T, Lepkowski W, Wilk SJ, Goryll M, Chen B, Kam J et al. Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. In IEEE Radiation Effects Data Workshop. 2013. 6658204 https://doi.org/10.1109/REDW.2013.6658204
Thornton, Trevor ; Lepkowski, William ; Wilk, Seth J. ; Goryll, Michael ; Chen, Bo ; Kam, Jason ; Bakkaloglu, Bertan ; Holbert, Keith. / Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. IEEE Radiation Effects Data Workshop. 2013.
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abstract = "A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).",
author = "Trevor Thornton and William Lepkowski and Wilk, {Seth J.} and Michael Goryll and Bo Chen and Jason Kam and Bertan Bakkaloglu and Keith Holbert",
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