Abstract
A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).
Original language | English (US) |
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Title of host publication | IEEE Radiation Effects Data Workshop |
DOIs | |
State | Published - 2013 |
Event | 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States Duration: Jul 8 2013 → Jul 12 2013 |
Other
Other | 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 |
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Country | United States |
City | San Francisco, CA |
Period | 7/8/13 → 7/12/13 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
- Nuclear and High Energy Physics
Cite this
Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. / Thornton, Trevor; Lepkowski, William; Wilk, Seth J.; Goryll, Michael; Chen, Bo; Kam, Jason; Bakkaloglu, Bertan; Holbert, Keith.
IEEE Radiation Effects Data Workshop. 2013. 6658204.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node
AU - Thornton, Trevor
AU - Lepkowski, William
AU - Wilk, Seth J.
AU - Goryll, Michael
AU - Chen, Bo
AU - Kam, Jason
AU - Bakkaloglu, Bertan
AU - Holbert, Keith
PY - 2013
Y1 - 2013
N2 - A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).
AB - A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).
UR - http://www.scopus.com/inward/record.url?scp=84892163608&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84892163608&partnerID=8YFLogxK
U2 - 10.1109/REDW.2013.6658204
DO - 10.1109/REDW.2013.6658204
M3 - Conference contribution
AN - SCOPUS:84892163608
SN - 9781479911363
BT - IEEE Radiation Effects Data Workshop
ER -