Abstract

A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

Original languageEnglish (US)
Title of host publication2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
DOIs
StatePublished - Dec 1 2013
Event2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States
Duration: Jul 8 2013Jul 12 2013

Publication series

NameIEEE Radiation Effects Data Workshop

Other

Other2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
CountryUnited States
CitySan Francisco, CA
Period7/8/137/12/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Nuclear and High Energy Physics

Cite this

Thornton, T., Lepkowski, W., Wilk, S. J., Goryll, M., Chen, B., Kam, J., Bakkaloglu, B., & Holbert, K. (2013). Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. In 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 [6658204] (IEEE Radiation Effects Data Workshop). https://doi.org/10.1109/REDW.2013.6658204