Abstract

A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

Original languageEnglish (US)
Title of host publicationIEEE Radiation Effects Data Workshop
DOIs
StatePublished - 2013
Event2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States
Duration: Jul 8 2013Jul 12 2013

Other

Other2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
CountryUnited States
CitySan Francisco, CA
Period7/8/137/12/13

Fingerprint

linear quadratic regulator
dropouts
foundries
SOI (semiconductors)
Foundries
CMOS
Transistors
transistors
field effect transistors
amplifiers
Irradiation
Radiation
irradiation
radiation
Power management

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Nuclear and High Energy Physics

Cite this

Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. / Thornton, Trevor; Lepkowski, William; Wilk, Seth J.; Goryll, Michael; Chen, Bo; Kam, Jason; Bakkaloglu, Bertan; Holbert, Keith.

IEEE Radiation Effects Data Workshop. 2013. 6658204.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thornton, T, Lepkowski, W, Wilk, SJ, Goryll, M, Chen, B, Kam, J, Bakkaloglu, B & Holbert, K 2013, Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node. in IEEE Radiation Effects Data Workshop., 6658204, 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013, San Francisco, CA, United States, 7/8/13. https://doi.org/10.1109/REDW.2013.6658204
@inproceedings{95a779fdc77240e484d7588fcf9f3511,
title = "Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node",
abstract = "A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).",
author = "Trevor Thornton and William Lepkowski and Wilk, {Seth J.} and Michael Goryll and Bo Chen and Jason Kam and Bertan Bakkaloglu and Keith Holbert",
year = "2013",
doi = "10.1109/REDW.2013.6658204",
language = "English (US)",
isbn = "9781479911363",
booktitle = "IEEE Radiation Effects Data Workshop",

}

TY - GEN

T1 - Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node

AU - Thornton, Trevor

AU - Lepkowski, William

AU - Wilk, Seth J.

AU - Goryll, Michael

AU - Chen, Bo

AU - Kam, Jason

AU - Bakkaloglu, Bertan

AU - Holbert, Keith

PY - 2013

Y1 - 2013

N2 - A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

AB - A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).

UR - http://www.scopus.com/inward/record.url?scp=84892163608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892163608&partnerID=8YFLogxK

U2 - 10.1109/REDW.2013.6658204

DO - 10.1109/REDW.2013.6658204

M3 - Conference contribution

AN - SCOPUS:84892163608

SN - 9781479911363

BT - IEEE Radiation Effects Data Workshop

ER -