Radiation tolerance of GaAs1-xSbxsolar cells: A candidate III-V system for space applications

Hadi Ashfari, Brandon K. Durant, Tristan Thrasher, Logan Abshire, Vincent R. Whiteside, Shun Chan, Dongyoung Kim, Sabina Hatch, Mingchu Tang, Jeremiah S. McNatt, Huiyun Liu, Martha R. McCartney, David J. Smith, Ian R. Sellers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The high radiation tolerance of GaAs0.86Sb0.14 based solar cells with a band gap suitable for PV is demonstrated at the low intensity low temperature (LILT) conditions. This system shows remarkable radiation hardness at AM0, and more prominently, at the conditions of several outer planetary targets. This is attributed to an irradiation induced change in the absorber band gap due to local heating and strain relaxation, and the generation of less prohibitive shallow Sb-based defects in the GaAs1-xSbx absorber.

Original languageEnglish (US)
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages680-682
Number of pages3
ISBN (Electronic)9781665419222
DOIs
StatePublished - Jun 20 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: Jun 20 2021Jun 25 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period6/20/216/25/21

Keywords

  • GaAsSb
  • LILT
  • radiation tolerance

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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