Radiation-induced base current broadening mechanisms in gated bipolar devices

X. J. Chen, Hugh Barnaby, Ronald L. Pease, R. D. Schrimpf, Dale G. Platteter, G. Dunham

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.

Original languageEnglish (US)
Pages (from-to)3178-3185
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 II
DOIs
StatePublished - Dec 2004
Externally publishedYes

Fingerprint

Bipolar transistors
Ionizing radiation
traps
Irradiation
Radiation
Oxides
radiation
junction transistors
Experiments
profiles
bipolar transistors
ionizing radiation
energy distribution
irradiation
thresholds
oxides
simulation

Keywords

  • Bipolar
  • Energy distribution
  • Gated devices
  • Interface traps
  • Ionization
  • Radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Radiation-induced base current broadening mechanisms in gated bipolar devices. / Chen, X. J.; Barnaby, Hugh; Pease, Ronald L.; Schrimpf, R. D.; Platteter, Dale G.; Dunham, G.

In: IEEE Transactions on Nuclear Science, Vol. 51, No. 6 II, 12.2004, p. 3178-3185.

Research output: Contribution to journalArticle

Chen, X. J. ; Barnaby, Hugh ; Pease, Ronald L. ; Schrimpf, R. D. ; Platteter, Dale G. ; Dunham, G. / Radiation-induced base current broadening mechanisms in gated bipolar devices. In: IEEE Transactions on Nuclear Science. 2004 ; Vol. 51, No. 6 II. pp. 3178-3185.
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