Radiation-induced base current broadening mechanisms in gated bipolar devices

X. J. Chen; H. J. Barnaby; Ronald L. Pease; R. D. Schrimpf; Dale G. Platteter; G. Dunham

doi:10.1109/TNS.2004.839198

Radiation-induced base current broadening mechanisms in gated bipolar devices

X. J. Chen, H. J. Barnaby, Ronald L. Pease, R. D. Schrimpf, Dale G. Platteter, G. Dunham

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.

Original language	English (US)
Pages (from-to)	3178-3185
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	6 II
DOIs	https://doi.org/10.1109/TNS.2004.839198
State	Published - Dec 2004
Externally published	Yes

Keywords

Bipolar
Energy distribution
Gated devices
Interface traps
Ionization
Radiation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2004.839198

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title = "Radiation-induced base current broadening mechanisms in gated bipolar devices",

abstract = "Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.",

keywords = "Bipolar, Energy distribution, Gated devices, Interface traps, Ionization, Radiation",

author = "Chen, {X. J.} and Barnaby, {H. J.} and Pease, {Ronald L.} and Schrimpf, {R. D.} and Platteter, {Dale G.} and G. Dunham",

note = "Funding Information: Manuscript received July 21, 2004.This work is supported by the Defense Threat Reduction Agency. X. J. Chen and H. J. Barnaby are with the University of Arizona, Tucson, 85721 AZ USA (e-mail: xchen@email.arizona.edu). R. L. Pease is with the RLP Research, Los Lunas, 87031 NM USA. R. D. Schrimpf is with the Vanderbilt University, Nashville, 37232 TN USA. D. G. Platteter and G. Dunham are with the NAVSEA Crane, Crane, 47522 IN USA. Digital Object Identifier 10.1109/TNS.2004.839198 Fig. 1. Representational cross section of LPNP device with gate terminal deposited over active base region.",

year = "2004",

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doi = "10.1109/TNS.2004.839198",

language = "English (US)",

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T1 - Radiation-induced base current broadening mechanisms in gated bipolar devices

AU - Chen, X. J.

AU - Barnaby, H. J.

AU - Pease, Ronald L.

AU - Schrimpf, R. D.

AU - Platteter, Dale G.

AU - Dunham, G.

N1 - Funding Information: Manuscript received July 21, 2004.This work is supported by the Defense Threat Reduction Agency. X. J. Chen and H. J. Barnaby are with the University of Arizona, Tucson, 85721 AZ USA (e-mail: xchen@email.arizona.edu). R. L. Pease is with the RLP Research, Los Lunas, 87031 NM USA. R. D. Schrimpf is with the Vanderbilt University, Nashville, 37232 TN USA. D. G. Platteter and G. Dunham are with the NAVSEA Crane, Crane, 47522 IN USA. Digital Object Identifier 10.1109/TNS.2004.839198 Fig. 1. Representational cross section of LPNP device with gate terminal deposited over active base region.

PY - 2004/12

Y1 - 2004/12

N2 - Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.

AB - Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.

KW - Bipolar

KW - Energy distribution

KW - Gated devices

KW - Interface traps

KW - Ionization

KW - Radiation

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JO - IEEE Transactions on Nuclear Science

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Radiation-induced base current broadening mechanisms in gated bipolar devices

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Keywords

ASJC Scopus subject areas

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