Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology

W. Chen; V. Pouget; G. K. Gentry; Hugh Barnaby; B. Vermeire; Bertan Bakkaloglu; Sayfe Kiaei; Keith Holbert; P. Fouillat

doi:10.1109/TNS.2006.885009

Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology

W. Chen, V. Pouget, G. K. Gentry, Hugh Barnaby, B. Vermeire, Bertan Bakkaloglu, Sayfe Kiaei, Keith Holbert, P. Fouillat

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 μm CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO₂). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ.

Original language	English (US)
Pages (from-to)	3449-3454
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	53
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2006.885009
State	Published - Dec 2006

Keywords

Annular gate transistor
Low noise amplifier (LNA)
Radiation hardened by design (RHBD)
Single-event transients
Total ionizing dose
Voltage-controlled oscillators (VCO)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2006.885009

Cite this

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title = "Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology",

abstract = "Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 μm CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ.",

keywords = "Annular gate transistor, Low noise amplifier (LNA), Radiation hardened by design (RHBD), Single-event transients, Total ionizing dose, Voltage-controlled oscillators (VCO)",

author = "W. Chen and V. Pouget and Gentry, {G. K.} and Hugh Barnaby and B. Vermeire and Bertan Bakkaloglu and Sayfe Kiaei and Keith Holbert and P. Fouillat",

note = "Funding Information: Manuscript received July 14, 2006; revised September 1, 2006. This work was supported by the DARPA and AFRL (Radiation Hardened Microelectronics Program). W. Chen, G. K. Gentry, H. J. Barnaby, B. Vermeire, B. Bakkaloglu, S. Kiaei, and K. Holbert are with Arizona State University, Tempe, AZ 85287 USA (e-mail: wenjian.chen@asu.edu). V. Pouget and P. Fouillat are with IXL Laboratory, University Bordeaux 1, Talence, France (e-mail: pouget@ixl.fr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2006.885009",

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language = "English (US)",

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AU - Pouget, V.

AU - Gentry, G. K.

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AU - Bakkaloglu, Bertan

AU - Kiaei, Sayfe

AU - Holbert, Keith

AU - Fouillat, P.

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KW - Annular gate transistor

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KW - Single-event transients

KW - Total ionizing dose

KW - Voltage-controlled oscillators (VCO)

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Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology

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Keywords

ASJC Scopus subject areas

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