Abstract
Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 μm CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3449-3454 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 53 |
| Issue number | 6 |
| DOIs | |
| State | Published - Dec 1 2006 |
Keywords
- Annular gate transistor
- Low noise amplifier (LNA)
- Radiation hardened by design (RHBD)
- Single-event transients
- Total ionizing dose
- Voltage-controlled oscillators (VCO)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
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Cite this
Chen, W., Pouget, V., Gentry, G. K., Barnaby, H., Vermeire, B., Bakkaloglu, B., Kiaei, S., Holbert, K., & Fouillat, P. (2006). Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology. IEEE Transactions on Nuclear Science, 53(6), 3449-3454. https://doi.org/10.1109/TNS.2006.885009