@article{7777ab98dbb14df99d5f13f79d687b9b,
title = "Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology",
abstract = "Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 μm CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ.",
keywords = "Annular gate transistor, Low noise amplifier (LNA), Radiation hardened by design (RHBD), Single-event transients, Total ionizing dose, Voltage-controlled oscillators (VCO)",
author = "W. Chen and V. Pouget and Gentry, {G. K.} and Hugh Barnaby and B. Vermeire and Bertan Bakkaloglu and Sayfe Kiaei and Keith Holbert and P. Fouillat",
note = "Funding Information: Manuscript received July 14, 2006; revised September 1, 2006. This work was supported by the DARPA and AFRL (Radiation Hardened Microelectronics Program). W. Chen, G. K. Gentry, H. J. Barnaby, B. Vermeire, B. Bakkaloglu, S. Kiaei, and K. Holbert are with Arizona State University, Tempe, AZ 85287 USA (e-mail: wenjian.chen@asu.edu). V. Pouget and P. Fouillat are with IXL Laboratory, University Bordeaux 1, Talence, France (e-mail: pouget@ixl.fr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2006.885009 Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "2006",
month = dec,
doi = "10.1109/TNS.2006.885009",
language = "English (US)",
volume = "53",
pages = "3449--3454",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}