Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology

W. Chen, V. Pouget, G. K. Gentry, Hugh Barnaby, B. Vermeire, Bertan Bakkaloglu, Sayfe Kiaei, Keith Holbert, P. Fouillat

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 μm CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ.

Original languageEnglish (US)
Pages (from-to)3449-3454
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number6
DOIs
StatePublished - Dec 1 2006

Keywords

  • Annular gate transistor
  • Low noise amplifier (LNA)
  • Radiation hardened by design (RHBD)
  • Single-event transients
  • Total ionizing dose
  • Voltage-controlled oscillators (VCO)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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