Radiation hardened by design digital I/O for high SEE and TID immunity

Lawrence T. Clark; Kyle E. Nielsen; Keith Holbert

doi:10.1109/TNS.2009.2034376

Radiation hardened by design digital I/O for high SEE and TID immunity

Lawrence T. Clark, Kyle E. Nielsen, Keith Holbert

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Level shifting radiation hardening by design input and output (I/O) pads on a 90 nm process using triple modular redundancy for single event effect (SEE) mitigation with high total ionizing dose (TID) immunity are described. The designs use annular NMOS transistors for both thin and thick gate transistors. SEE mitigation is experimentally demonstrated by heavy ion measurements with LET_eff up to 220 MeV-cm²/mg with no failures. Measurements of the I/O standby leakage current after TID irradiation to 2 Mrad(Si) show no standby current increase.

Original language	English (US)
Article number	5341404
Pages (from-to)	3408-3414
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	56
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2009.2034376
State	Published - Dec 2009

Keywords

Electrostatic discharge protection
Input-output (I/O) circuits
Radiation hardening by design (RHBD)
Single event effects (SEEs)
Single event transients (SETs)
Total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2009.2034376

Cite this

@article{449986c4f6164ed5a6c355d45afce463,

title = "Radiation hardened by design digital I/O for high SEE and TID immunity",

abstract = "Level shifting radiation hardening by design input and output (I/O) pads on a 90 nm process using triple modular redundancy for single event effect (SEE) mitigation with high total ionizing dose (TID) immunity are described. The designs use annular NMOS transistors for both thin and thick gate transistors. SEE mitigation is experimentally demonstrated by heavy ion measurements with LETeff up to 220 MeV-cm2/mg with no failures. Measurements of the I/O standby leakage current after TID irradiation to 2 Mrad(Si) show no standby current increase.",

keywords = "Electrostatic discharge protection, Input-output (I/O) circuits, Radiation hardening by design (RHBD), Single event effects (SEEs), Single event transients (SETs), Total ionizing dose (TID)",

author = "Clark, {Lawrence T.} and Nielsen, {Kyle E.} and Keith Holbert",

note = "Funding Information: Manuscript received July 16, 2009; revised September 29, 2009 and October 02, 2009. Current version published December 09, 2009. This work was supported by AFRL/RVSE, Albuquerque, NM. The authors are with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: lawrence. clark@asu.edu; kyle.neilsen@asu.edu, keith.holbert@asu.edu). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2009.2034376",

year = "2009",

month = dec,

doi = "10.1109/TNS.2009.2034376",

language = "English (US)",

volume = "56",

pages = "3408--3414",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Radiation hardened by design digital I/O for high SEE and TID immunity

AU - Clark, Lawrence T.

AU - Nielsen, Kyle E.

AU - Holbert, Keith

N1 - Funding Information: Manuscript received July 16, 2009; revised September 29, 2009 and October 02, 2009. Current version published December 09, 2009. This work was supported by AFRL/RVSE, Albuquerque, NM. The authors are with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: lawrence. clark@asu.edu; kyle.neilsen@asu.edu, keith.holbert@asu.edu). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2009.2034376

PY - 2009/12

Y1 - 2009/12

N2 - Level shifting radiation hardening by design input and output (I/O) pads on a 90 nm process using triple modular redundancy for single event effect (SEE) mitigation with high total ionizing dose (TID) immunity are described. The designs use annular NMOS transistors for both thin and thick gate transistors. SEE mitigation is experimentally demonstrated by heavy ion measurements with LETeff up to 220 MeV-cm2/mg with no failures. Measurements of the I/O standby leakage current after TID irradiation to 2 Mrad(Si) show no standby current increase.

AB - Level shifting radiation hardening by design input and output (I/O) pads on a 90 nm process using triple modular redundancy for single event effect (SEE) mitigation with high total ionizing dose (TID) immunity are described. The designs use annular NMOS transistors for both thin and thick gate transistors. SEE mitigation is experimentally demonstrated by heavy ion measurements with LETeff up to 220 MeV-cm2/mg with no failures. Measurements of the I/O standby leakage current after TID irradiation to 2 Mrad(Si) show no standby current increase.

KW - Electrostatic discharge protection

KW - Input-output (I/O) circuits

KW - Radiation hardening by design (RHBD)

KW - Single event effects (SEEs)

KW - Single event transients (SETs)

KW - Total ionizing dose (TID)

UR - http://www.scopus.com/inward/record.url?scp=72349093600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72349093600&partnerID=8YFLogxK

U2 - 10.1109/TNS.2009.2034376

DO - 10.1109/TNS.2009.2034376

M3 - Article

AN - SCOPUS:72349093600

SN - 0018-9499

VL - 56

SP - 3408

EP - 3414

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

M1 - 5341404

ER -

Radiation hardened by design digital I/O for high SEE and TID immunity

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this