Radiation effects of high voltage MESFETs at the 45nm node

Seth J. Wilk; William Lepkowski; Bo Chen; Jason Kam; Michael Goryll; Keith Holbert; Trevor Thornton

doi:10.1109/REDW.2013.6658202

Radiation effects of high voltage MESFETs at the 45nm node

Seth J. Wilk, William Lepkowski, Bo Chen, Jason Kam, Michael Goryll, Keith Holbert, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.

Original language	English (US)
Title of host publication	2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
DOIs	https://doi.org/10.1109/REDW.2013.6658202
State	Published - Dec 1 2013
Event	2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States Duration: Jul 8 2013 → Jul 12 2013

Publication series

Name	IEEE Radiation Effects Data Workshop

Other

Other	2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
Country	United States
City	San Francisco, CA
Period	7/8/13 → 7/12/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation
Nuclear and High Energy Physics

Access to Document

10.1109/REDW.2013.6658202

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Cite this

Wilk, S. J., Lepkowski, W., Chen, B., Kam, J., Goryll, M., Holbert, K., & Thornton, T. (2013). Radiation effects of high voltage MESFETs at the 45nm node. In 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 [6658202] (IEEE Radiation Effects Data Workshop). https://doi.org/10.1109/REDW.2013.6658202

Radiation effects of high voltage MESFETs at the 45nm node. / Wilk, Seth J.; Lepkowski, William; Chen, Bo; Kam, Jason; Goryll, Michael ; Holbert, Keith ; Thornton, Trevor.

2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013. 2013. 6658202 (IEEE Radiation Effects Data Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wilk, SJ, Lepkowski, W, Chen, B, Kam, J, Goryll, M , Holbert, K & Thornton, T 2013, Radiation effects of high voltage MESFETs at the 45nm node. in 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013., 6658202, IEEE Radiation Effects Data Workshop, 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013, San Francisco, CA, United States, 7/8/13. https://doi.org/10.1109/REDW.2013.6658202

Wilk SJ, Lepkowski W, Chen B, Kam J, Goryll M , Holbert K et al. Radiation effects of high voltage MESFETs at the 45nm node. In 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013. 2013. 6658202. (IEEE Radiation Effects Data Workshop). https://doi.org/10.1109/REDW.2013.6658202

Wilk, Seth J. ; Lepkowski, William ; Chen, Bo ; Kam, Jason ; Goryll, Michael ; Holbert, Keith ; Thornton, Trevor. / Radiation effects of high voltage MESFETs at the 45nm node. 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013. 2013. (IEEE Radiation Effects Data Workshop).

@inproceedings{72d73c1dd3bb46f1b9fd3eac4576f6f4,

title = "Radiation effects of high voltage MESFETs at the 45nm node",

abstract = "A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.",

author = "Wilk, {Seth J.} and William Lepkowski and Bo Chen and Jason Kam and Michael Goryll and Keith Holbert and Trevor Thornton",

year = "2013",

month = dec,

day = "1",

doi = "10.1109/REDW.2013.6658202",

language = "English (US)",

isbn = "9781479911363",

series = "IEEE Radiation Effects Data Workshop",

booktitle = "2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013",

note = "2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 ; Conference date: 08-07-2013 Through 12-07-2013",

}

TY - GEN

T1 - Radiation effects of high voltage MESFETs at the 45nm node

AU - Wilk, Seth J.

AU - Lepkowski, William

AU - Chen, Bo

AU - Kam, Jason

AU - Goryll, Michael

AU - Holbert, Keith

AU - Thornton, Trevor

PY - 2013/12/1

Y1 - 2013/12/1

N2 - A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.

AB - A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.

UR - http://www.scopus.com/inward/record.url?scp=84892186874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892186874&partnerID=8YFLogxK

U2 - 10.1109/REDW.2013.6658202

DO - 10.1109/REDW.2013.6658202

M3 - Conference contribution

AN - SCOPUS:84892186874

SN - 9781479911363

T3 - IEEE Radiation Effects Data Workshop

BT - 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013

T2 - 2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013

Y2 - 8 July 2013 through 12 July 2013

ER -