@inproceedings{72d73c1dd3bb46f1b9fd3eac4576f6f4,
title = "Radiation effects of high voltage MESFETs at the 45nm node",
abstract = "A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.",
author = "Wilk, {Seth J.} and William Lepkowski and Bo Chen and Jason Kam and Michael Goryll and Keith Holbert and Trevor Thornton",
year = "2013",
month = dec,
day = "1",
doi = "10.1109/REDW.2013.6658202",
language = "English (US)",
isbn = "9781479911363",
series = "IEEE Radiation Effects Data Workshop",
booktitle = "2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013",
note = "2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 ; Conference date: 08-07-2013 Through 12-07-2013",
}