Abstract

A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.

Original languageEnglish (US)
Title of host publicationIEEE Radiation Effects Data Workshop
DOIs
Publication statusPublished - 2013
Event2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013 - San Francisco, CA, United States
Duration: Jul 8 2013Jul 12 2013

Other

Other2013 IEEE Radiation Effects Data Workshop, REDW 2013 - Held in Conjunction with the 50th IEEE Nuclear and Space Radiation Effects Conference, NSREC 2013
CountryUnited States
CitySan Francisco, CA
Period7/8/137/12/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Nuclear and High Energy Physics

Cite this

Wilk, S. J., Lepkowski, W., Chen, B., Kam, J., Goryll, M., Holbert, K., & Thornton, T. (2013). Radiation effects of high voltage MESFETs at the 45nm node. In IEEE Radiation Effects Data Workshop [6658202] https://doi.org/10.1109/REDW.2013.6658202