Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all?

R. Leon, G. M. Swift, B. Magness, W. A. Taylor, Y. S. Tang, K. L. Wang, P. Dowd, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photoluminescence (PL) emission from equivalent InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR Leon, R Noetzel, S Fafard, D Huffaker
Volume642
StatePublished - 2001
Externally publishedYes
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: Nov 27 2000Nov 30 2000

Other

OtherSemiconductor Quantum Dots II
CountryUnited States
CityBoston, MA
Period11/27/0011/30/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Leon, R., Swift, G. M., Magness, B., Taylor, W. A., Tang, Y. S., Wang, K. L., Dowd, P., & Zhang, Y-H. (2001). Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all? In R. Leon, R. Noetzel, S. Fafard, & D. Huffaker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 642)