Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all?

R. Leon; G. M. Swift; B. Magness; W. A. Taylor; Y. S. Tang; K. L. Wang; P. Dowd; Yong-Hang Zhang

Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all?

R. Leon, G. M. Swift, B. Magness, W. A. Taylor, Y. S. Tang, K. L. Wang, P. Dowd, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The photoluminescence (PL) emission from equivalent InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	R Leon, R Noetzel, S Fafard, D Huffaker
Volume	642
State	Published - 2001
Externally published	Yes
Event	Semiconductor Quantum Dots II - Boston, MA, United States Duration: Nov 27 2000 → Nov 30 2000

Other

Other	Semiconductor Quantum Dots II
Country/Territory	United States
City	Boston, MA
Period	11/27/00 → 11/30/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all?",

abstract = "The photoluminescence (PL) emission from equivalent InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.",

author = "R. Leon and Swift, {G. M.} and B. Magness and Taylor, {W. A.} and Tang, {Y. S.} and Wang, {K. L.} and P. Dowd and Yong-Hang Zhang",

year = "2001",

language = "English (US)",

volume = "642",

editor = "R Leon and R Noetzel and S Fafard and D Huffaker",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Semiconductor Quantum Dots II ; Conference date: 27-11-2000 Through 30-11-2000",

}

TY - GEN

T1 - Radiation effects in InGaAs/GaAs quantum dots

T2 - Semiconductor Quantum Dots II

AU - Leon, R.

AU - Swift, G. M.

AU - Magness, B.

AU - Taylor, W. A.

AU - Tang, Y. S.

AU - Wang, K. L.

AU - Dowd, P.

AU - Zhang, Yong-Hang

PY - 2001

Y1 - 2001

N2 - The photoluminescence (PL) emission from equivalent InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

AB - The photoluminescence (PL) emission from equivalent InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

UR - http://www.scopus.com/inward/record.url?scp=17144466371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144466371&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:17144466371

VL - 642

BT - Materials Research Society Symposium - Proceedings

A2 - Leon, R

A2 - Noetzel, R

A2 - Fafard, S

A2 - Huffaker, D

Y2 - 27 November 2000 through 30 November 2000

ER -

Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all?

Abstract

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ASJC Scopus subject areas

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