Quenched phonon drag in silicon nanowires reveals significant effect in the bulk at room temperature

Jyothi Sadhu, Hongxiang Tian, Jun Ma, Bruno Azeredo, Junhwan Kim, Karthik Balasundaram, Chen Zhang, Xiuling Li, P. M. Ferreira, S. Sinha

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Existing theory and data cannot quantify the contribution of phonon drag to the Seebeck coefficient (S) in semiconductors at room temperature. We show that this is possible through comparative measurements between nanowires and the bulk. Phonon boundary scattering completely quenches phonon drag in silicon nanowires enabling quantification of its contribution to S in bulk silicon in the range 25-500 K. The contribution is surprisingly large (∼34%) at 300 K even at doping of ∼3 × 1019 cm-3. Our results contradict the notion that phonon drag is negligible in degenerate semiconductors at temperatures relevant for thermoelectric energy conversion. A revised theory of electron-phonon momentum exchange that accounts for a phonon mean free path spectrum agrees well with the data.

Original languageEnglish (US)
Pages (from-to)3159-3165
Number of pages7
JournalNano Letters
Volume15
Issue number5
DOIs
StatePublished - May 13 2015
Externally publishedYes

Fingerprint

Silicon
drag
Nanowires
Drag
nanowires
Thermoelectric energy conversion
silicon
room temperature
Semiconductor materials
Seebeck coefficient
energy conversion
Seebeck effect
mean free path
Temperature
Momentum
Doping (additives)
Scattering
momentum
Electrons
scattering

Keywords

  • electron-phonon scattering
  • phonon drag
  • Seebeck effect
  • silicon nanowires
  • thermoelectrics

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Quenched phonon drag in silicon nanowires reveals significant effect in the bulk at room temperature. / Sadhu, Jyothi; Tian, Hongxiang; Ma, Jun; Azeredo, Bruno; Kim, Junhwan; Balasundaram, Karthik; Zhang, Chen; Li, Xiuling; Ferreira, P. M.; Sinha, S.

In: Nano Letters, Vol. 15, No. 5, 13.05.2015, p. 3159-3165.

Research output: Contribution to journalArticle

Sadhu, J, Tian, H, Ma, J, Azeredo, B, Kim, J, Balasundaram, K, Zhang, C, Li, X, Ferreira, PM & Sinha, S 2015, 'Quenched phonon drag in silicon nanowires reveals significant effect in the bulk at room temperature', Nano Letters, vol. 15, no. 5, pp. 3159-3165. https://doi.org/10.1021/acs.nanolett.5b00267
Sadhu, Jyothi ; Tian, Hongxiang ; Ma, Jun ; Azeredo, Bruno ; Kim, Junhwan ; Balasundaram, Karthik ; Zhang, Chen ; Li, Xiuling ; Ferreira, P. M. ; Sinha, S. / Quenched phonon drag in silicon nanowires reveals significant effect in the bulk at room temperature. In: Nano Letters. 2015 ; Vol. 15, No. 5. pp. 3159-3165.
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