Quenched magnetic moment in Mn-doped amorphous Si films

Li Zeng, E. Helgren, M. Rahimi, F. Hellman, R. Islam, B. J. Wilkens, Robert Culbertson, David Smith

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.

Original languageEnglish (US)
Article number073306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number7
DOIs
StatePublished - Mar 6 2008

Fingerprint

Magnetic moments
Magnetization
magnetic moments
moments
X ray absorption spectroscopy
Amorphous silicon
Magnetic susceptibility
Quenching
Impurities
Atoms
magnetization
Curie-Weiss law
amorphous silicon
absorption spectroscopy
quenching
magnetic permeability
impurities
atoms
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Quenched magnetic moment in Mn-doped amorphous Si films. / Zeng, Li; Helgren, E.; Rahimi, M.; Hellman, F.; Islam, R.; Wilkens, B. J.; Culbertson, Robert; Smith, David.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 7, 073306, 06.03.2008.

Research output: Contribution to journalArticle

Zeng, Li ; Helgren, E. ; Rahimi, M. ; Hellman, F. ; Islam, R. ; Wilkens, B. J. ; Culbertson, Robert ; Smith, David. / Quenched magnetic moment in Mn-doped amorphous Si films. In: Physical Review B - Condensed Matter and Materials Physics. 2008 ; Vol. 77, No. 7.
@article{2c76ba4145c8426bb421061ee5e80a5d,
title = "Quenched magnetic moment in Mn-doped amorphous Si films",
abstract = "The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.",
author = "Li Zeng and E. Helgren and M. Rahimi and F. Hellman and R. Islam and Wilkens, {B. J.} and Robert Culbertson and David Smith",
year = "2008",
month = "3",
day = "6",
doi = "10.1103/PhysRevB.77.073306",
language = "English (US)",
volume = "77",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Quenched magnetic moment in Mn-doped amorphous Si films

AU - Zeng, Li

AU - Helgren, E.

AU - Rahimi, M.

AU - Hellman, F.

AU - Islam, R.

AU - Wilkens, B. J.

AU - Culbertson, Robert

AU - Smith, David

PY - 2008/3/6

Y1 - 2008/3/6

N2 - The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.

AB - The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.

UR - http://www.scopus.com/inward/record.url?scp=40949136046&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40949136046&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.77.073306

DO - 10.1103/PhysRevB.77.073306

M3 - Article

AN - SCOPUS:40949136046

VL - 77

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 7

M1 - 073306

ER -