Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Takeyoshi Sugaya, Mutsuo Ogura, Yoshinobu Sugiyama, Toshiyuki Shimizu, Kenji Yonei, Kee Youn Jang, Jonathan P. Bird, David K. Ferry

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

Original languageEnglish (US)
Pages (from-to)371-373
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
StatePublished - Jul 16 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Sugaya, T., Ogura, M., Sugiyama, Y., Shimizu, T., Yonei, K., Jang, K. Y., Bird, J. P., & Ferry, D. K. (2001). Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors. Applied Physics Letters, 79(3), 371-373. https://doi.org/10.1063/1.1385344