Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Takeyoshi Sugaya; Mutsuo Ogura; Yoshinobu Sugiyama; Toshiyuki Shimizu; Kenji Yonei; Kee Youn Jang; Jonathan P. Bird; David K. Ferry

doi:10.1063/1.1385344

Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Takeyoshi Sugaya, Mutsuo Ogura, Yoshinobu Sugiyama, Toshiyuki Shimizu, Kenji Yonei, Kee Youn Jang, Jonathan P. Bird, David K. Ferry

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

Original language	English (US)
Pages (from-to)	371-373
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.1385344
State	Published - Jul 16 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors",

abstract = "The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.",

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AU - Sugaya, Takeyoshi

AU - Ogura, Mutsuo

AU - Sugiyama, Yoshinobu

AU - Shimizu, Toshiyuki

AU - Yonei, Kenji

AU - Jang, Kee Youn

AU - Bird, Jonathan P.

AU - Ferry, David K.

PY - 2001/7/16

Y1 - 2001/7/16

N2 - The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

AB - The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.

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Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

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