The results of the quasi-one-dimensional transport characteristics of ridge-type InGaAs/InAlAs quantum-wire field-effect transistors (QWRFET) were analyzed using the selective molecular-beam epitaxy (MBE). The depopulation of one-dimensional subbands was also analyzed for the FET structures. The ridge-type QWRFET were found to exhibit excellent one-dimensional transport characteristics. The selective MBE growth of the QWR resulted in structures exhibiting little sidewall depletion. One-dimensional subband splitting larger than 7 meV was obtained in the wires.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)