Abstract

Silicon based technology continues to mature and move steadily towards the auger limited maximum efficiency (∼29%). In particular silicon heterojunction technology currently holds the world record for silicon based single junction cells. Optimization of heterojunction solar cells now requires a concentrated and deep understanding of the physics of transport. In this paper we present a multi-physics/multiscale approach to understanding and analyzing transport in silicon heterojunction solar cells. We self-consistently couple a traditional drift-diffusion model to an ensemble Monte Carlo and kinetic Monte Carlo to create a multiscale solver that is capable of including high field effects present at the a-Si/c-Si heterointerface and the nuances of defect assisted transport through the a-Si:H(i) buffer layer.

Original languageEnglish (US)
Title of host publicationSISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages14-17
Number of pages4
Volume2018-September
ISBN (Electronic)9781538667880
DOIs
StatePublished - Nov 28 2018
Event2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 - Austin, United States
Duration: Sep 24 2018Sep 26 2018

Other

Other2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018
CountryUnited States
CityAustin
Period9/24/189/26/18

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Keywords

  • amorphous silicon
  • heterojunction
  • modeling
  • multiscale
  • silicon
  • simulation
  • solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

Cite this

Muralidharan, P., Goodnick, S., & Vasileska, D. (2018). Quasi 1D multi-physics modeling of silicon heterojunction solar cells. In SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings (Vol. 2018-September, pp. 14-17). [8551745] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2018.8551745