Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Y. Ding, K. B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, Brian Skromme, H. Meidia, S. Mahajan

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

Original languageEnglish (US)
Article number041305
Pages (from-to)413051-413054
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number4
StatePublished - Jan 2004

Fingerprint

Electron emission
Ballistics
ballistics
electron emission
Semiconductor quantum wells
Microscopic examination
quantum wells
inclusions
microscopy
Conduction bands
conduction bands
Interface states
Stacking faults
Ultrahigh vacuum
crystal defects
ultrahigh vacuum
Diodes
Metals
diodes
Semiconductor materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ding, Y., Park, K. B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B., ... Mahajan, S. (2004). Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy. Physical Review B - Condensed Matter and Materials Physics, 69(4), 413051-413054. [041305].

Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy. / Ding, Y.; Park, K. B.; Pelz, J. P.; Palle, K. C.; Mikhov, M. K.; Skromme, Brian; Meidia, H.; Mahajan, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 4, 041305, 01.2004, p. 413051-413054.

Research output: Contribution to journalArticle

Ding, Y, Park, KB, Pelz, JP, Palle, KC, Mikhov, MK, Skromme, B, Meidia, H & Mahajan, S 2004, 'Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy', Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 4, 041305, pp. 413051-413054.
Ding, Y. ; Park, K. B. ; Pelz, J. P. ; Palle, K. C. ; Mikhov, M. K. ; Skromme, Brian ; Meidia, H. ; Mahajan, S. / Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 4. pp. 413051-413054.
@article{cf02b6448bae4127839acfa484d136c6,
title = "Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy",
abstract = "High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.",
author = "Y. Ding and Park, {K. B.} and Pelz, {J. P.} and Palle, {K. C.} and Mikhov, {M. K.} and Brian Skromme and H. Meidia and S. Mahajan",
year = "2004",
month = "1",
language = "English (US)",
volume = "69",
pages = "413051--413054",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

AU - Ding, Y.

AU - Park, K. B.

AU - Pelz, J. P.

AU - Palle, K. C.

AU - Mikhov, M. K.

AU - Skromme, Brian

AU - Meidia, H.

AU - Mahajan, S.

PY - 2004/1

Y1 - 2004/1

N2 - High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

AB - High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

UR - http://www.scopus.com/inward/record.url?scp=1542411666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542411666&partnerID=8YFLogxK

M3 - Article

VL - 69

SP - 413051

EP - 413054

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 4

M1 - 041305

ER -