Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Y. Ding; K. B. Park; J. P. Pelz; K. C. Palle; M. K. Mikhov; Brian Skromme; H. Meidia; S. Mahajan

doi:10.1103/PhysRevB.69.041305

Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Y. Ding, K. B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, Brian Skromme, H. Meidia, S. Mahajan

Electrical Engineering

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34 Scopus citations

Abstract

High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.69.041305
State	Published - Jan 22 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy",

abstract = "High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.",

author = "Y. Ding and Park, {K. B.} and Pelz, {J. P.} and Palle, {K. C.} and Mikhov, {M. K.} and Brian Skromme and H. Meidia and S. Mahajan",

year = "2004",

month = jan,

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doi = "10.1103/PhysRevB.69.041305",

language = "English (US)",

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T1 - Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

AU - Ding, Y.

AU - Park, K. B.

AU - Pelz, J. P.

AU - Palle, K. C.

AU - Mikhov, M. K.

AU - Skromme, Brian

AU - Meidia, H.

AU - Mahajan, S.

PY - 2004/1/22

Y1 - 2004/1/22

N2 - High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

AB - High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

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DO - 10.1103/PhysRevB.69.041305

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SN - 1098-0121

VL - 69

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

ER -

Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

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