Quantum transport simulation of the DOS function, self-consistent fields and mobility in MOS inversion layers

Dragica Vasileska, Terry Eldridge, Paolo Bordone, David K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.

Original languageEnglish (US)
Pages (from-to)21-25
Number of pages5
JournalVLSI Design
Volume6
Issue number1-4
DOIs
StatePublished - Jan 1 1998

Keywords

  • Broadening of the states
  • Green's functions
  • Inversion layers
  • Mobility
  • Surface-roughness

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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