@article{decb88207297488887b3aca1bd2f811b,
title = "Quantum transport simulation of the DOS function, self-consistent fields and mobility in MOS inversion layers",
abstract = "We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schr{\"o}dinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.",
keywords = "Broadening of the states, Green's functions, Inversion layers, Mobility, Surface-roughness",
author = "Dragica Vasileska and Terry Eldridge and Paolo Bordone and Ferry, {David K.}",
note = "Funding Information: Vasileska Dragica vasilesk@imap2.asu.edu 1 Eldridge Terry 2 Bordone Paolo 3 Ferry David K. 1 1 Center for Solid-State Electronics Research Arizona State University Tempe AZ 85287-6206 USA asu.edu 2 McDonnell Douglas Helicopter Systems 5000 E. McDowell Rd Mesa, AZ 85215 USA mdhelicopters.com 3 Dipartimento di Fisica ed Instituto Nazionale di Fisica della Materia Universit{\`a} di Modena Via Campi 213/A Modena 41100 Italy unimore.it 1998 6 1-4 21 25 1998 Copyright {\textcopyright} 1998 Hindawi Publishing Corporation This is an open access article distributed under the Creative Commons Attribution License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schr{\"o}dinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data. Green's functions mobility inversion layers surface-roughness broadening of the states. http://dx.doi.org/10.13039/100000181 Air Force Office of Scientific Research http://dx.doi.org/10.13039/100000006 Office of Naval Research ARPA ",
year = "1998",
doi = "10.1155/1998/46360",
language = "English (US)",
volume = "6",
pages = "21--25",
journal = "VLSI Design",
issn = "1065-514X",
publisher = "Hindawi Publishing Corporation",
number = "1-4",
}