Abstract
We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 21-25 |
| Number of pages | 5 |
| Journal | VLSI Design |
| Volume | 6 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Jan 1 1998 |
Keywords
- Broadening of the states
- Green's functions
- Inversion layers
- Mobility
- Surface-roughness
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering
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Vasileska, D., Eldridge, T., Bordone, P., & Ferry, D. K. (1998). Quantum transport simulation of the DOS function, self-consistent fields and mobility in MOS inversion layers. VLSI Design, 6(1-4), 21-25. https://doi.org/10.1155/1998/46360